Optical and electrical characteristics of 17 keV X-rays exposed TiO 2 films and Ag/TiO 2 / p -Si MOS device

Ishfaq, Muhammad; Khan, M. Rizwan; Ali, Awais; Bhardwaj, Sunil; Cepek, Cinzia; Bhatti, Arshad Saleem

doi:10.1016/j.mssp.2017.02.009

Cited by 19 publications

(1 citation statement)

References 48 publications

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“…It is well known that the phonon scattering may lead to the local heating. The local heating may cause the aggregation of the smaller grains into a bigger cluster [20], [21]. Thus, the rises in the D value can be attributed to the local heating generated by irradiation.…”

Section: Irradiation-induced Changes On the Crystallographic And Morphological Characteristics Dy2o3/si Thin Filmsmentioning

confidence: 99%

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy ₂ O ₃ )

Gürer¹,

Yılmaz²

2020

RAP 2019 Conference Proceedings

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In this study, the effects of gamma irradiation on the physical, electrochemical, and electrical properties of Dy2O3/p-Si thin films have been studied. For this, the rare earth oxide (Dy2O3) was deposited onto p-Si wafer by using an e-beam evaporation technique. The evolutions on the crystallographic and morphologic characteristics of the films under gamma irradiation were analyzed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), respectively, while irradiation effects on the electrochemistry of the films were characterized by X-ray photoelectron spectroscopy (XPS). Furthermore, variations on the electrical characteristics of Dy2O3/p-Si thin films were also specified by Capacitance-Voltage (C-V) and Conductance-Voltage (G/ω-V) measurements. No significant changes on the crystallographic orientation were observed after gamma irradiation exposures. However, the grain size of the films was increased slightly due to the fact that the local heating aggregated the smaller grains into a bigger cluster. In addition, the surface roughness was increased after irradiation indicating that it deforms the films' surface morphology. Two different intense intermixing phases revealed the presence of the electrochemical analysis of the virgin Dy2O3/p-Si thin films. These phases are Dysprosium sub-Oxide (DyxOy) and Oxygen deficient in Dy2O3 films. After irradiation exposures, Oxygen incorporation, vacancy, and interstitial defects formation were observed in the electrochemical characteristics of the films. On the other hand, the capacitance curves exhibit kinks in the region between depletion and accumulation due to the presence of the intermixing phases of Dy2O3 films. The capacitance of samples significantly increased with the increase of radiation doses, which are correlated with the generated interface state density and/or improvement of dielectric characteristics of Dy2O3 owing to Oxygen diffusion.

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Section: Irradiation-induced Changes On the Crystallographic And Morphological Characteristics Dy2o3/si Thin Filmsmentioning

confidence: 99%

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy ₂ O ₃ )

Gürer¹,

Yılmaz²

2020

RAP 2019 Conference Proceedings

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Light Sensitive Properties and Temperature-Dependent Electrical Performance of n-TiO2/p-Si Anisotype Heterojunction Electrochemically Formed TiO2 on p-Si

Koca

Yılmaz

Ekinci

et al. 2021

Journal of Elec Materi

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Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure

Reddy¹,

Akkera

Sekhar

et al. 2018

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Optical and electrical characteristics of 17 keV X-rays exposed TiO 2 films and Ag/TiO 2 / p -Si MOS device

Cited by 19 publications

References 48 publications

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy ₂ O ₃ )

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy ₂ O ₃ )

Light Sensitive Properties and Temperature-Dependent Electrical Performance of n-TiO2/p-Si Anisotype Heterojunction Electrochemically Formed TiO2 on p-Si

Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure

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Optical and electrical characteristics of 17 keV X-rays exposed TiO 2 films and Ag/TiO 2 / p -Si MOS device

Cited by 19 publications

References 48 publications

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy 2 O 3 )

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy 2 O 3 )

Light Sensitive Properties and Temperature-Dependent Electrical Performance of n-TiO2/p-Si Anisotype Heterojunction Electrochemically Formed TiO2 on p-Si

Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure

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Product

Resources

About

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy ₂ O ₃ )

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy ₂ O ₃ )