Optical absorption and Hall effect in (220) and (400) oriented polycrystalline silicon films

Kamiya, Toshio; Nakahata, Kouichi; Sameshima, Toshiyuki; Watanabe, Tadashi; Mouri, T.; Shimizu, Isamu

doi:10.1063/1.1288170

Cited by 13 publications

(6 citation statements)

References 9 publications

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“…From the viewpoint of reducing the manufacturing cost and energy consumption, however, the most important issue in recent years is to deposit device-quality poly-Si films at high rates on low-cost substrate such as glass and metal sheet at substrate temperatures less than 600°C. Although there is a lot of deposition methods to fabricate poly-Si films at low temperatures, it is recognized that plasma-enhanced CVD (PECVD) [2] and hot-wire CVD [3] are the most applicable techniques to realize the low temperature growth of poly-Si films. However, increasing deposition rate is still necessary even in those methods.…”

Section: Carrier Gasmentioning

confidence: 99%

Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD

Ohmi¹,

Kakiuchi²,

Yasutake³

et al. 2005

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials

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Section: Carrier Gasmentioning

confidence: 99%

Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD

Ohmi¹,

Kakiuchi²,

Yasutake³

et al. 2005

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials

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“…However, different transport mechanisms maybe observed, depending on the range of measurement temperatures. Several attempts have been made to investigate the correlation between electronic transport properties and the microstructural parameters of μc-Si:H films such as crystallinity [5], film thickness [6][7][8], crystallite size [9,10], crystalline orientation [11][12][13] and conglomerate crystallite sizes [14].…”

Section: Introductionmentioning

confidence: 99%

Role of microstructure in electronic transport behavior of highly crystallized undoped microcrystalline Si Films

2007

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“…8 Hall effect has conventionally been utilized to evaluate material properties such as carrier density and carrier mobility also in poly-Si films. [9][10][11][12][13][14] However, the Hall effect in poly-Si film itself has not yet been sufficiently analyzed. It should be deliberated that an anomalous Hall effect often occurs in random systems such as amorphous and polycrystalline semiconductors.…”

mentioning

confidence: 98%

Analysis of Hall Voltage in Micro Poly-Si Hall Cells

Kimura

Yamaguchi²,

Hashimoto³

et al. 2010

Electrochem. Solid-State Lett.

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Hall voltage in micro poly-Si Hall cells is evaluated to analyze the Hall effect in poly-Si films and investigate the possibility of magnetic sensors. Normal Hall effect occurs, but the Hall voltage has an offset voltage even when magnetic field is zero, whereas the change in the Hall voltage is proportional to the magnetic field. The offset voltage is caused by the control current flows through zigzag paths due to the random location of polycrystalline grains. These results mean that material evaluation based on the Hall effect is also available for poly-Si films and suggest the possibility of area sensors.Thin-film devices, which are expected to be extensively used for giant microelectronics, allow a wide variety of advanced devices to be fabricated on large substrates in stacked structures at low cost. 1 In particular, poly-Si thin film transistors ͑TFTs͒ are applied to not only flat panel displays, such as liquid crystal displays, 2 organic light emitting diode displays, 3 and electronic papers, 4 but also to photosensing devices, such as ambient light sensors, 5 image scanners, 6 and artificial retinas. 7 Moreover, they are promising for general electronics including some types of information processing. 8 Hall effect has conventionally been utilized to evaluate material properties such as carrier density and carrier mobility also in poly-Si films. 9-14 However, the Hall effect in poly-Si film itself has not yet been sufficiently analyzed. It should be deliberated that an anomalous Hall effect often occurs in random systems such as amorphous and polycrystalline semiconductors. 15,16 Moreover, only values averaged within a large area can be obtained using the conventional millimeter-size poly-Si Hall cells.Magnetic sensors have widely been utilized in the fields of fundamental physics, engineering, industry, medical science, etc. However, only magnetic field where a sensing device is located can be detected using the conventional magnetic sensors. Therefore, a magnetic sensor using poly-Si Hall cells has recently been proposed, 17 which can be applied to area sensors because they can be fabricated on large substrates at low cost with some amplifying circuits and operating units integrated using poly-Si TFTs as written above. However, some important performances such as characteristic deviation have not yet been sufficiently analyzed, which is a critical issue to apply them to magnetic sensors. Moreover, miniaturizing the limitation of poly-Si Hall cells has not been discussed, which is an elementary knowledge to consider concrete applications.In this research, Hall voltage in micro poly-Si Hall cells has been evaluated to analyze in detail the Hall effect in poly-Si films and to investigate the possibility of applying them to magnetic sensors. The polarity, offset voltage, and change in the Hall voltage with the change in the magnetic field are measured and analyzed. The miniaturizing limitation of the poly-Si Hall cells is also discussed. SampleMicro poly-Si Hall cells were fabricated on a glass substrate as...

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Optical absorption and Hall effect in (220) and (400) oriented polycrystalline silicon films

Cited by 13 publications

References 9 publications

Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD

Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD

Role of microstructure in electronic transport behavior of highly crystallized undoped microcrystalline Si Films

Analysis of Hall Voltage in Micro Poly-Si Hall Cells

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