Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD

Ohmi, Hiromasa; Kakiuchi, Hiroaki; Yasutake, Kiyoshi; Nakahama, Yasuji; Ebata, Yusuke; Yoshii, Kazuki; Mori, Yojiro

doi:10.7567/ssdm.2005.f-4-3

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials 2005

DOI: 10.7567/ssdm.2005.f-4-3

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Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD

Hiromasa Ohmi¹,

Hiroaki Kakiuchi²,

Kiyoshi Yasutake³

et al.

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Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD

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References 5 publications

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