Optical absorption and disorder in hydrogenated amorphous SiGe and SiC alloy systems

Light and heat induced interdiffusion in Sb/As2S3 nano-multilayered film

“…Moreover B is highly dependent on the character of the bonding. The parameter B 1/2 of the Tauc region depends on the product of the oscillator strength of the optical transition, the deformation potential, and the mean deviation of the atomic coordinates [13]. The values of B 1/2 of the illuminated, annealed and as-prepared films are listed in Table 1.…”

Effect of H2 dilution on Cat-CVD a-SiC:H films

“…Now these two Raman parameters are correlated to the bond angle deviation or the short-range order (SRO) and the intermediate range order (IRO) respectively [20,21]. H 2 dilution is known to increase both short range order (SRO) and intermediate range order (IRO) in a-Si:H [22] and to some extent in plasma deposited a-SiC:H [23]. Indications of such an improvement in the SRO is also visible in the present case for H 2 dilution where the ( TO decreases initially.…”

Influence of substrate temperature on growth of a-Si:H films by reactive facing target sputtering deposition

“…Figure 5 shows the optical absorption properties of a-Si:H films deposited at various Ts in the Tauc's plot, where the absorption coefficient α is calculated from UV-VIS transmittance measurement. The microstructure of the films can be quantitatively described by the optical parameters include Tauc band gap (E g ) and Tauc parameter (B), which is derived from Tauc equation [24]: where α is the absorption coefficient, E photon is the incident photon energy and B is the joint optical density of states that reflect overall structural degree of order in film network, with a large value of B indicating a small degree of structural disorder. By extrapolating the tangent of every curves to zero absorption, the E g and B for various samples is obtained respectively from the intercepts at α = 0 and tangent values, as shown in the insert of Figure 5.…”