Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

Sarı, Emre; Nizamoğlu, Sedat; Choi, Jung Hun; Lee, Seung-Jae; Baik, Kwang Hyeon; Lee, In Hwan; Baek, Jong Hyeob; Hwang, Soon Jung; Demir, Hilmi Volkan

doi:10.1364/oe.19.005442

Cited by 10 publications

(1 citation statement)

References 22 publications

(37 reference statements)

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“…Benefiting from the absence of piezoelectric polarization in the a-plane samples, the wave functions of electrons and holes in the a-plane samples are better overlapped than that in the c-plane samples [44,45]. As a consequence, the carrier recombination is much faster in the a-plane samples, so that the trapping effect of surface states is less distinct in the TRPL spectra [64,65].…”

Section: Reduced Exciton Diffusionmentioning

confidence: 99%

Lateral carrier confinement in InGaN quantum-well nanorods

2015

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Section: Reduced Exciton Diffusionmentioning

confidence: 99%

Lateral carrier confinement in InGaN quantum-well nanorods

2015

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Multilayer Strategy for Photoelectrochemical Hydrogen Generation: New Electrode Architecture that Alleviates Multiple Bottlenecks

2022

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Years of research have demonstrated that the use of multiple components is essential to the development of a commercial photoelectrode to address specific bottlenecks, such as low charge separation and injection efficiency, low carrier diffusion length and lifetime, and poor durability. A facile strategy for the synthesis of multilayered photoanodes from atomic-layer-deposited ultrathin films has enabled a new type of electrode architecture with a total multilayer thickness of 15–17 nm. We illustrate the advantages of this electrode architecture by using nanolayers to address different bottlenecks, thus producing a multilayer photoelectrode with improved interface kinetics and shorter electron transport path, as determined by interface analyses. The photocurrent density was twice that of the bare structure and reached a maximum of 33.3 ± 2.1 mA cm−2 at 1.23 VRHE. An integrated overall water-splitting cell consisting of an electrocatalytic NiS cathode and Bi2S3/NiS/NiFeO/TiO2 photoanode was used for precious-metal-free seawater splitting at a cell voltage of 1.23 V without degradation. The results and root analyses suggest that the distinctive advantages of the electrode architecture, which are superior to those of bulk bottom-up core–shell and hierarchical architectures, originate from the high density of active sites and nanometer-scale layer thickness, which enhance the suitability for interface-oriented energy conversion processes.

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Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range

You

Liu

Jiang

et al. 2013

Applied Physics Letters

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The technique of femtosecond fluorescence up-conversion was employed to explore the transient photoluminescence and carrier decay dynamics in c-plane (In,Ga)N multi-quantum-well light emitting diodes over a wide bias range. By investigating the bias dependence of initial transient photoluminescence intensity and the luminescence lifetime, the field and carrier density effects on the radiative recombination coefficient were revealed for both low and high current injection conditions, and in good agreement with the theory.

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Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

Cited by 10 publications

References 22 publications

Lateral carrier confinement in InGaN quantum-well nanorods

Lateral carrier confinement in InGaN quantum-well nanorods

Multilayer Strategy for Photoelectrochemical Hydrogen Generation: New Electrode Architecture that Alleviates Multiple Bottlenecks

Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range

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