Lateral carrier confinement in InGaN quantum-well nanorods

Shi, Chentian; Zhang, Chunfeng; Wang, Xiaoyong

doi:10.1016/j.aop.2015.04.012

Cited by 1 publication

(2 citation statements)

References 77 publications

(163 reference statements)

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“…176,177 The nitride nanowires have surmounted the various challenges in Solid State Lighting (SSL) such as the green cap, efficiency droop and the quark-confined Stark effect induced degradation in the device. [173][174][175][176][177][178][179][180] The nano LEDs have exhibited excellent optical properties within the spectral range due to relaxation in strain, 181 the easy growth of sample with higher Indium content and enhanced light harvesting capabilities. 182,183 The In x Ga 1-x N LEDs can produce a linearly polarized light by incorporating a dielectric layer with low refractive index between the multilayer nanogratings and a fluorescent ceramic.…”

Section: In X Ga 1-x N Based Nanostructures For Solid State Lightingmentioning

confidence: 99%

“…The efficiency drop caused by density activated defect recombination can be suppressed in nanorod structures of aplane InGaN QWs by an effect wherein the lateral carrier confinement overcomes the increased surface trapping that comes into existence during fabrication of the material. 180,298 The effects of variation in the composition in InGaN QWs on their spontaneous emission properties lead to the variation in optical matrix elements and the emission energy. 170 The behavior of ground state transition momentum matrix elements with Indium content is found to correlate well with experimentally extracted spontaneous recombination parameters in InGaN QWs.…”

Section: Recent Advances In In X Ga 1-x N Based Nanostructures For So...mentioning

confidence: 99%

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Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

Kour¹,

Arya

Verma

et al. 2019

ECS J. Solid State Sci. Technol.

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In recent times, the demand for electrical energy is increased to such an extent that the scientific research has to be focused on the development of materials that fulfil the growing demands of energy for efficient solid state lighting purposes and provide clean and green energy to mitigate the alarming effects of climate change. The ternary Indium Gallium Nitride (In x Ga 1-x N) alloys have emerged as the potential candidate for Solid State lighting as they inherent such attributes that make them capable for these applications. In this review, the attributes of In x Ga 1-x N alloys have been discussed. The dependence of bandgap and bowing parameter on the composition of In x Ga 1-x N alloys along with various techniques employed for the growth of these alloys in bulk and nanostructure forms have been reviewed. The recent advances in In x Ga 1-x N based nanostructures for Solid State lighting have also been extensively reviewed. The challenges that are to be overcome for potential use of In x Ga 1-x N alloys like phase segregation, unavailability of a suitable substrate, polarization and doping have been thoroughly highlighted. In the end, the conclusion and future scope of work on these wonderful classes of materials has been drawn.

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Section: In X Ga 1-x N Based Nanostructures For Solid State Lightingmentioning

confidence: 99%

Section: Recent Advances In In X Ga 1-x N Based Nanostructures For So...mentioning

confidence: 99%

Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

Kour¹,

Arya

Verma

et al. 2019

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

Lateral carrier confinement in InGaN quantum-well nanorods

Cited by 1 publication

References 77 publications

Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

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Lateral carrier confinement in InGaN quantum-well nanorods

Cited by 1 publication

References 77 publications

Review—Recent Advances and Challenges in Indium Gallium Nitride (InxGa1-xN) Materials for Solid State Lighting

Review—Recent Advances and Challenges in Indium Gallium Nitride (InxGa1-xN) Materials for Solid State Lighting

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Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting