Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr nanoplates on prepatterned indium tin oxide (ITO) electrodes via a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of ∼3 V, a narrow full width at half-maximum of 22 nm, and an external quantum efficiency of ∼0.2%. Moreover, through scanning photocurrent microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr Schottky barriers with highly efficient carrier injection is essential in realizing the EL. The formation of the ITO/p-type CsPbBr Schottky diode is also confirmed by the corresponding transistor characteristics. The achievement of EL nanodevices enabled by directly grown perovskite nanostructures could find applications in on-chip integrated photonics circuits and systems.

Magnetorheological elastomer (MRE) is a new class of smart materials, whose modulus can be controlled by the applied magnetic field. In this paper, using a white light speckle technique for deformation analysis, we present the real-time dynamic deformation progress (the vector diagram of the displacement or the whole-field quantitative displacement distribution) of the MRE and the elastomer–ferromagnet composite (EFC) while the magnetic field is turned on. The experimental results verify the prediction presented in a recently published paper, (Borcea and Bruno 2001 J. Mech. Phys. Solids 49 2877–919), and reveals some interesting phenomena which will give us a deeper understanding for such smart materials.

Organometal halide perovskites are new light-harvesting materials for lightweight and flexible optoelectronic devices due to their excellent optoelectronic properties and low-temperature process capability. However, the preparation of high-quality perovskite films on flexible substrates has still been a great challenge to date. Here, a novel vapor-solution method is developed to achieve uniform and pinhole-free organometal halide perovskite films on flexible indium tin oxide/poly(ethylene terephthalate) substrates. Based on the as-prepared high-quality perovskite thin films, high-performance flexible photodetectors (PDs) are constructed, which display a nR value of 81 A W at a low working voltage of 1 V, three orders higher than that of previously reported flexible perovskite thin-film PDs. In addition, these flexible PDs exhibit excellent flexural stability and durability under various bending situations with their optoelectronic performance well retained. This breakthrough on the growth of high-quality perovskite thin films opens up a new avenue to develop high-performance flexible optoelectronic devices.

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