Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon

Gibson, S. J.; Boulanger, Jonathan; LaPierre, Ray

doi:10.1088/0268-1242/28/10/105025

Cited by 37 publications

(41 citation statements)

References 26 publications

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“…6. The recurrent observation of such an interface layer has been described in other works, where though successful growth of GaAs nanowires on patterned silicon dioxide is not related to the presence of interstitial oxide at the SiO 2 hole opening [42][43][44]. However the role of Si/SiO 2 -interface in the growth mechanism is still not fully understood and requires further investigation.…”

Section: Discussionmentioning

confidence: 82%

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Matteini

Tütüncüoǧlu

Rüffer

et al. 2014

Journal of Crystal Growth

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a b s t r a c tPhysical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si by the Ga-assisted method. We report on a systematic study of the occurrence of GaAs nanowire growth on silicon by the Ga-assisted method for different kinds of silicon oxides: native, thermal and hydrogen silsesquioxane (HSQ). We find that success in achieving nanowires and the growth conditions such as gallium rate and substrate temperature depend mainly on the physical properties of the surface: oxide stoichiometry, oxide thickness and surface roughness. These results constitute a step further towards the integration of GaAs technology on the Si platform.

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Section: Discussionmentioning

confidence: 82%

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Matteini

Tütüncüoǧlu

Rüffer

et al. 2014

Journal of Crystal Growth

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“…More generally, our procedure combines features of the deterministic VLS growth of nanowires and random selfassembly of surface islands. We have shown that the usual assumption, an instantaneous nucleation of nanowires [17,25,[31][32][33] does not work for Ga-catalyzed growth of GaAs nanowires, and could significantly change the deterministic growth picture of VLS nanowires in general. Figure 6.…”

Section: Resultsmentioning

confidence: 93%

“…Pre-patterning the substrate would be an approach to control density. However, such a technique is technologically demanding and presents several open challenges [15][16][17]. Furthermore, a regular array would not work on all incident angles due to diffraction effects [18].…”

Section: Introductionmentioning

confidence: 99%

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

et al. 2015

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Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter and density is extremely important for high-efficient nanowire-based solar cells. In this work, we investigate mastering the diameter and density of self-catalyzed GaAs nanowires on Si(111) substrates by growth conditions using the self-assembly of Ga droplets. We introduce a new paradigm of the characteristic nucleation time controlled by group III flux and temperature that determine diameter and length distributions of GaAs nanowires. This insight into the growth mechanism is then used to grow nanowire forests with a completely tailored diameter-density distribution. We also show how the reflectivity of nanowire arrays can be minimized in this way. In general, this work opens new possibilities for the cost-effective and controlled fabrication of the ensembles of self-catalyzed III-V nanowires for different applications, in particular in next-generation photovoltaic devices.S Online supplementary data available from stacks.iop.org/NANO/26/105603/mmedia

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“…More detailed characterization on the length and diameter distribution is given in the appendix. [20][21][22]. The same device is much more straight forward for InAs, though the small band gap hinders the achievement of high efficiency.…”

Section: Introductionmentioning

confidence: 99%

Characterization and analysis of InAs/p–Si heterojunction nanowire-based solar cell

Mallorquí¹,

Alarcón-Lladó²,

Russo-Averchi³

et al. 2014

J. Phys. D: Appl. Phys.

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The growth of compound semiconductor nanowires on the silicon platform has opened many new perspectives in the area of electronics, optoelectronics and photovoltaics. We have grown a 1 × 1 mm 2 array of InAs nanowires on p-type silicon for the fabrication of a solar cell. Even though the nanowires are spaced by a distance of 800 nm with a 3.3% filling volume, they absorb most of the incoming light resulting in an efficiency of 1.4%. Due to the unfavourable band alignment, carrier separation at the junction is poor. Photocurrent increases sharply at the surrounding edge with the silicon, where the nanowires do not absorb anymore. This is further proof of the enhanced absorption of semiconductors in nanowire form. This work brings further elements in the design of nanowire-based solar cells.

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Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon

Cited by 37 publications

References 26 publications

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

Characterization and analysis of InAs/p–Si heterojunction nanowire-based solar cell

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