Characterization and analysis of InAs/p–Si heterojunction nanowire-based solar cell

Abstract

The growth of compound semiconductor nanowires on the silicon platform has opened many new perspectives in the area of electronics, optoelectronics and photovoltaics. We have grown a 1 × 1 mm 2 array of InAs nanowires on p-type silicon for the fabrication of a solar cell. Even though the nanowires are spaced by a distance of 800 nm with a 3.3% filling volume, they absorb most of the incoming light resulting in an efficiency of 1.4%. Due to the unfavourable band alignment, carrier separation at the junction is poor. Photocurrent increases sharply at the surrounding edge with the silicon, where the nanowires do not absorb anymore. This is further proof of the enhanced absorption of semiconductors in nanowire form. This work brings further elements in the design of nanowire-based solar cells.

Lattice-Matched InGaAs–InAlAs Core–Shell Nanowires with Improved Luminescence and Photoresponse Properties

“…Overall, these characteristics suggest that in the axial heterojunction geometry the passivated InAlAs-InGaAs core–shell NW structure acts as a low-loss carrier conductor and that most of the photocarriers are generated in the Si substrate. 58 This is further supported by measurements of the wavelength-dependent external quantum efficiency which indicate that that photocarrier generation by the NWs is negligible (see Supporting Information ).…”

InAs/InAsP Core/shell Nanowire Photodiode on a Si Substrate

“…19,20 The NWs were grown using a low-pressure (60 Torr) Emcore D-75 MOCVD system. Trimethylindium (TMIn), tertiarybutylarsine (TBAs), and tertiarybutylphosphine (TBP) were used as precursors, and hydrogen was used as a carrier gas.…”

Atomic-scale tomography of semiconductor nanowires

“…And he experimentally concluded that enhanced In concentration could result in higher photocurrent up to 8.6% of illuminating light conversion. However, the power conversion efficiency (PCE) of InGaAs/InAs heterostructured nanowire array made by Parsion K. Mohseni can reach up to 2.51% [99] and solar cells made by InAs/p-Si heterojunction nanowire had a PCE of 1.4% [100]. In addition, Mallorqui further concluded that density and length reduction of nanowires could yield better performance [100].…”

“…However, the power conversion efficiency (PCE) of InGaAs/InAs heterostructured nanowire array made by Parsion K. Mohseni can reach up to 2.51% [99] and solar cells made by InAs/p-Si heterojunction nanowire had a PCE of 1.4% [100]. In addition, Mallorqui further concluded that density and length reduction of nanowires could yield better performance [100]. Considering the crucial importance of P/N junctions and hetero-junctions to application of solar cells, it is essential to understand the interfacial morphologies as well as elemental distributions on both sides of the junction, In this regards, APT has demonstrated unique advantages in studying P/N junctions and multi-layer study structure.…”