Operation of a 2500V 150A Si-IGBT / SiC Diode Module

Lendenmann, H.; Johansson, Nils; Mou, Di; Frischholz, M.; Åstrand, B.; Isberg, P.; Ovrén, C.

doi:10.4028/www.scientific.net/msf.338-342.1423

Cited by 22 publications

(12 citation statements)

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“…The development of SiC bipolar devices is attractive for the industry because these devices are more suitable than unipolar ones for high-voltage applications (>6 kV), due to lower on-resistance owing to the effect of conductivity modulation. 1 A crucial issue for the development of such devices is the presence of deep-level defects which, acting as recombination centers, affect the lifetime of charge carriers in lightly doped epilayers. Since deep levels play an important role in the development of SiC-based electronics, much effort has been devoted in the past for their characterization.…”

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confidence: 99%

Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

Alfieri

Kimoto

2013

Applied Physics Letters

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confidence: 99%

Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

Alfieri

Kimoto

2013

Applied Physics Letters

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“…For very high-voltage applications (>10 kV), bipolar devices are more attractive than unipolar devices in terms of lower on-resistance owing to the effect of conductivity modulation. [6][7][8] In such very highvoltage bipolar devices, a long carrier lifetime is required to modulate the conductivity of thick voltage-blocking layers. A carrier lifetime required for the devices with a blocking voltage of 10 kV will be about 5 s and more than 20 s for 20 kV.…”

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confidence: 99%

Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

Hiyoshi

Kimoto

2009

Appl. Phys. Express

217

191

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Significant reduction of major deep levels in n-type 4H-SiC(0001) epilayers by means of thermal oxidation is demonstrated. By thermal oxidation of epilayers at 1150 -1300 C, the concentration of the Z 1=2 and EH 6=7 centers has been reduced from ð0:3 { 2Þ Â 10 13 cm À3 to below the detection limit (1 Â 10 11 cm À3 ). The depth-profile analysis of the Z 1=2 center has revealed that the Z 1=2 center is eliminated to a depth of about 50 m from the surface after thermal oxidation at 1300 C for 5 h. The carrier lifetime in an n-type 4H-SiC epilayer measured by differential microwave photoconductance decay has been significantly improved from 0.73 s (as-grown) to 1.62 s (after oxidation: 1300 C, 5 h Â 2). The reduction mechanism of the Z 1=2 and EH 6=7 centers is discussed. #

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“…The first successful attempt in the demonstration of a 5 kV 4H-SiC rectifier was done using a 4H-SiC n epitaxial layer with a thickness of 85 m and a doping of 1 to 7 10 cm [1]. Other demonstrations [2]- [4] of 3 kV 4H-SiC p-i-n rectifiers show that extremely high switching speeds and an on-state voltage drop comparable to Si p-i-n rectifiers are achieved when operated at sufficiently high current densities. The biggest challenges facing the realization of such high voltage rectifiers is the design of the edge termination and the growth of high purity, low defect density epitaxial layers with sufficiently high minority carrier lifetimes.…”

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Large area, ultra-high voltage 4H-SiC p-i-n rectifiers

Singh

Irvine

Capell

et al. 2002

IEEE Trans. Electron Devices

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This paper reports the design, fabrication and high temperature characteristics of 1 mm 2 , 4 mm 2 and 9 mm 2 4H-SiC p-in rectifiers with 6 kV, 5 kV, and 10 kV blocking voltage, respectively. These results were obtained from two lots in an effort to increase the total power levels on such rectifiers. An innovative design utilizing a highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were used in order to realize good on-state as well as stable blocking characteristics. For the 1 mm 2 and 4 mm 2 rectifier, a forward voltage drop of less than 5 V was observed at 500 A/cm 2 and the peak reverse recovery current shows a modest 50% increase in the 25 C to 225 C temperature range. On the 10 kV, 9 mm 2 rectifier, a forward voltage drop of less than 4.8 V was observed at 100 A/cm 2 in the entire 25 C to 200 C temperature range. For this device, the reverse recovery characteristics show a modest 110% increase in the peak reverse recovery current from 25 C to 200 C. A dramatically low rr of 3.8 C was obtained at a forward current density of 220 A/cm 2 at 200 C for this ultra high voltage rectifier. These devices show that more than three orders of magnitude reduction in reverse recovery charge is obtained in 4H-SiC rectifiers as compared to comparable Si rectifiers.

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Operation of a 2500V 150A Si-IGBT / SiC Diode Module

Cited by 22 publications

References 0 publications

Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

Large area, ultra-high voltage 4H-SiC p-i-n rectifiers

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