Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

Hiyoshi, Toru; Kimoto, Tsunenobu

doi:10.1143/apex.2.041101

Cited by 217 publications

(203 citation statements)

References 31 publications

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“…This measured carrier lifetime in as-grown 3C-SiC is much higher than the reported values in 3C-SiC grown by other methods, [19][20][21] even a little bit higher than the typical values in as-grown 4H-SiC. [11][12][13][14][15] The maximum carrier lifetime reported in asgrown 4H-SiC is 8.6 ls, 11 which was measured by l-PCD in a high-quality 50 lm thick CVD epilayer under an injection of 5 Â 10 12 cm À2 . The measured conditions are quite similar to our measurements.…”

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confidence: 57%

“…[11][12][13][14][15][16] The main lifetime-limiting defects are recognized as Z 1/2 and EH 6/7 centers, which are related to intrinsic defects with energy levels located at 0.65 eV and 1.55 eV below the conduction band, respectively. [11][12][13][14] Recently, it was shown that the reduction of the defects of Z 1/2 and EH 6/7 by post-growth processes results in an improvement of carrier lifetime. Kimoto et al 15 reported that the carrier lifetime in a 148-lm-thick 4H-SiC layer is enhanced from 0.69 to 9.5 ls after thermal treatment.…”

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confidence: 99%

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Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Sun

Ivanov

Liljedahl

et al. 2012

Applied Physics Letters

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As a challenge and consequence due to its metastable nature, cubic silicon carbide (3C-SiC) has only shown inferior material quality compared with the established hexagonal polytypes. We report on growth of 3C-SiC(111) having a state of the art semiconductor quality in the SiC polytype family. The x-ray diffraction and low temperature photoluminescence measurements show that the cubic structure can indeed reach a very high crystal quality. As an ultimate device property, this material demonstrates a measured carrier lifetime of 8.2 mu s which is comparable with the best carrier lifetime in 4 H-SiC layers. In a 760-mu m thick layer, we show that the interface recombination can be neglected since almost all excess carriers recombines before reaching the interface while the surface recombination significantly reduces the carrier lifetime. In fact, a comparison of experimental lifetimes with numerical simulations indicates that the real bulk lifetime in such high quality 3C-SiC is in the range of 10-15 mu s

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confidence: 57%

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confidence: 99%

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Sun

Ivanov

Liljedahl

et al. 2012

Applied Physics Letters

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“…The n-type epilayer was intentionally doped with nitrogen to 6 × 10 14 cm −3 . Before formation of the p-type anode, thermal oxidation at 1400 • C for 48 h was performed to enhance the carrier lifetime [30,32]. The low-injection carrier lifetime can be increased from 2 µs to about 30 µs by this process.…”

Section: Methodsmentioning

confidence: 99%

“…Thus, the forward characteristics of SiC pin diodes were mainly investigated in this study. In recent years, elimination of carrier-lifetime killers has been reported [29,30] and the carrier lifetime of n-type SiC has substantially been improved from about 1-2 µs (as-grown) to 30 µs or even longer [31,32]. In this study, the forward characteristics were simulated by changing the carrier lifetime in a wide range.…”

Section: Of 15mentioning

confidence: 99%

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

et al. 2016

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Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

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“…Its presence has been demonstrated to have a strong impact on the leakage current in Schottky contacts [66]. It has been argued that carbon and/or silicon atoms emitted from the SiO 2 /SiC interface formed during sacrificial thermal oxidation can diffuse inside the epilayer, and consequently, their interstitials annihilate via recombination with carbon vacancies, which may be the main constituent of the Z 1 /Z 2 defect [64].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale transport properties at silicon carbide interfaces

Roccaforte¹,

Giannazzo²,

Raineri³

2010

J. Phys. D: Appl. Phys.

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Abstract. Wide band gap semiconductors promise devices with performances not achievable using silicon technology. Among them, Silicon Carbide (SiC) is considered the top-notch material for a new generation of power electronic devices, ensuring the improved energy efficiency requested in the modern society. In spite of the significant progresses achieved in the last decade in the material quality, there are still several scientific open issues related to the basic transport properties at SiC interfaces and ion-doped regions that can affect the devices performances, keeping them still far from their theoretical limits. Hence, significant efforts in fundamental research at nanoscale have become mandatory to better understand the carrier transport phenomena, both at surfaces and interfaces. In this paper, the most recent experiences on nanoscale transport properties will be addressed, reviewing the relevant key points for the basic devices building blocks. The selected topics include the major concerns related to the electronic transport in metal/SiC interfaces, to the carrier concentration and mobility in ion-doped regions, and to channel mobility in metal/oxide/SiC systems. Some aspects related to interfaces between different SiC polytypes are also presented. All these issues will be discussed considering the current status and the drawbacks of SiC devices.

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Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

Cited by 217 publications

References 31 publications

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Nanoscale transport properties at silicon carbide interfaces

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