Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

Alfieri, Giovanni; Kimoto, Tsunenobu

doi:10.1063/1.4802248

Cited by 27 publications

(12 citation statements)

References 21 publications

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“…Danno and Kimoto [22] have resolved EH6 and EH7 by simulating the Fourire-transform DLTS peak of EH6/7. The direct evidence that EH6/7 consists of two components was provided by Alfieri and Kimoto [23]. In this study, they have resolved two energy levels at 1.30 and 1.49 eV, for EH6 and EH7 respectively.…”

Section: Deep Level Defects In N-type 4h-sicsupporting

confidence: 50%

An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques

Capan¹

2022

Preprint

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In this review paper, an overview of radiation induced deep level defects in n-type 4H-SiC studied by junction spectroscopy techniques, is given. In addition to carbon vacancy (Vc), present in as-grown material already, we focus on the following deep level defects: silicon vacancy (VSi), carbon interstitial (Ci), and carbon antisite-carbon vacancy (Csi-Vc) pair. Recent advances in measurements by junction spectroscopy techniques that have led the progress toward better understanding of radiation induced defects are presented.

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Section: Deep Level Defects In N-type 4h-sicsupporting

confidence: 50%

An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques

Capan¹

2022

Preprint

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“…Laplace DLTS investigation [12] showed that the Z1 and Z2 transitions are related to the carbon vacancy at the hexagonal and pseudocubic sites of the lattice, respectively. The deeper level EH6/EH7 at E C À 1.58 eV was also analyzed by the Laplace DLTS, [13] allowing separation of the overlapping emissions from levels EH6 and EH7. Results show that the EH6 and EH7 levels are, in fact, located 1.30 and 1.49 eV below the conduction band minimum, respectively.…”

Section: Resultsmentioning

confidence: 99%

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Hazdra

Vobecký

2019

Physica Status Solidi (a)

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Radiation damage produced in 4H-SiC n-epilayers by electrons of different energies is presented. Junction barrier Schottky power SiC diodes are irradiated with 1.05, 2.1, 5, and 10 MeV electrons with doses up to 600 kGy. Radiation defects are characterized by capacitance deep-level transient spectroscopy and capacitance-to-voltage (C-V) measurement. Results, which are compared with previous data obtained on 4.5 MeV electrons, show that the damage structure is very similar for all irradiation energies. Dominating is the generation of simple, thermally unstable defects evidenced by the presence of acceptor levels located at 0.25, 0.38, 0.60, and 0.72 eV below the 4H-SiC conduction band edge. With increasing energy of electrons, the number of simple defects saturates, and the production of more complex, cluster-related defects grow. Majority of introduced defects are acceptor centers, which compensate n-type (nitrogen) doping of the epilayer. The carrier removal rate increases with electron energy and follows well the classical nonionization energy loss (NIEL) scaling for electrons in silicon. The stability of introduced defects and their effect on carrier lifetime reduction are discussed, as well.

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“…23 This technique had been previously employed in the separation of an analogous set of deeper traps, labelled EH 6/7 , and attributed to donor transitions involving the V C defect in 4H-SiC. 24 Laplace-DLTS was also successful in the study of E 1 /E 2 traps observed in 6H-SiC samples. 25 Like Z 1/2 , E 1 /E 2 shows up as a prominent band in conventional DLTS spectra of as-grown and irradiated material and has been attributed to a carbon vacancy.…”

Section: Introductionmentioning

confidence: 99%

Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

Capan

Brodar

Coutinho

et al. 2018

Journal of Applied Physics

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We provide direct evidence that the broad Z 1/2 peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged 4H-SiC, has two components, namely Z 1 and Z 2 , with activation energies for electron emission of 0.59 and 0.67 eV, respectively. We assign these components to Z = 1/2 → Z − 1/2 + e − → Z 0 1/2 + 2e − transition sequences from negative-U ordered acceptor levels of carbon vacancy (V C ) defects at hexagonal/pseudocubic sites, respectively. By employing short filling pulses at lower temperatures, we were able to characterize the first acceptor level of V C on both sub-lattice sites. Activation energies for electron emission of 0.48 and 0.41 eV were determined for Z 1 (−/0) and Z 2 (−/0) transitions, respectively. Based on trap filling kinetics and capture barrier calculations, we investigated the two-step transitions from neutral to doubly negatively charged Z 1 and Z 2 . Positions of the first and second acceptor levels of V C at both lattice sites, as well as (=/0) occupancy levels were derived from the analysis of the emission and capture data.

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Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

Abstract: Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy

Cited by 27 publications

References 21 publications

An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques

An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

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