Operation and performance of the CNSE Vistec VB300 electron beam lithography system

Hartley, John G.; Groves, Timothy R.; Bonam, Ravi; Raghunathan, Ananthan; Ruan, Junru; McClelland, Alexandra; Crosland, Nigel; Cunanan, J.; Han, Keping

doi:10.1117/12.848396

Cited by 5 publications

(1 citation statement)

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“…One of the principle obstacles that must be overcome is reaching an economically viable throughput. Electron-beam lithography, for example, can generate sub-10 nm features, − over large areas, with good placement and overlay, but because of its relatively low throughput, it is limited commercially to the production of masks for use in photo- and nanoimprint lithography and device development, , and noncommercially to the production of nanostructures for research and defense purposes. The prospects for increasing the throughput of electron-beam systems are severely limited because of the fundamental physics of space-charge effectsthe repulsion between neighboring electrons in a single electron column leads to a loss of resolution or blurring of the beam as the beam current increases. − This limits the maximum beam current, and hence the throughput, that can be attained at a given resolution.…”

Section: Other Top-down Techniquesmentioning

confidence: 99%

Nanomanufacturing: A Perspective

2016

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Nanomanufacturing, the commercially-scalable and economically-sustainable mass production of nanoscale materials and devices, represents the tangible outcome of the nanotechnology revolution. In contrast to those used in nanofabrication for research purposes, nanomanufacturing processes must satisfy the additional constraints of cost, throughput, and time to market. Taking silicon integrated circuit manufacturing as a baseline, we consider the factors involved in matching processes with products, examining the characteristics and potential of top-down and bottom-up processes, and their combination. We also discuss how a careful assessment of the way in which function can be made to follow form can enable high-volume manufacturing of nanoscale structures with the desired useful, and exciting, properties.

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Section: Other Top-down Techniquesmentioning

confidence: 99%

Nanomanufacturing: A Perspective

2016

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Bossung curves and focus stigmation matrices for Gaussian beam lithography

Raghunathan

Hartley

Crosland³

2011

Microelectronic Engineering

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Influence of secondary electrons in high-energy electron beam lithography

Raghunathan

Hartley

2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The effect of secondary electrons in electron beam lithography is investigated based on a technique called point exposure distribution measurements. This technique involves printing a series of dots at different exposure doses using a high contrast electron beam resist. The experimental results indicate that the secondary electrons are the most likely cause for exposure events. The secondary electrons generated due to forward scattering also limit the highest achievable resolution. An analytical model is developed here based on the physics governing secondary electron generation and transport. The model is able to predict the dependence of dose on the observed diameter to within a reasonable accuracy. The experimental results were verified with the model at both 100 and 50 keV.

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Operation and performance of the CNSE Vistec VB300 electron beam lithography system

Cited by 5 publications

References 0 publications

Nanomanufacturing: A Perspective

Nanomanufacturing: A Perspective

Bossung curves and focus stigmation matrices for Gaussian beam lithography

Influence of secondary electrons in high-energy electron beam lithography

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