Combining vapour sensors into arrays is an accepted compromise to mitigate poor selectivity of conventional sensors. Here we show individual nanofabricated sensors that not only selectively detect separate vapours in pristine conditions but also quantify these vapours in mixtures, and when blended with a variable moisture background. Our sensor design is inspired by the iridescent nanostructure and gradient surface chemistry of Morpho butterflies and involves physical and chemical design criteria. The physical design involves optical interference and diffraction on the fabricated periodic nanostructures and uses optical loss in the nanostructure to enhance the spectral diversity of reflectance. The chemical design uses spatially controlled nanostructure functionalization. Thus, while quantitation of analytes in the presence of variable backgrounds is challenging for most sensor arrays, we achieve this goal using individual multivariable sensors. These colorimetric sensors can be tuned for numerous vapour sensing scenarios in confined areas or as individual nodes for distributed monitoring.

As scaling continues, the need for reliable sub-10-nm electron beam lithography is apparent. Throughput is a major drawback and complex test structure fabrication would be constrained by practical limits on writing time. A major challenge for sub-10-nm patterning with electron beam lithography is tool and process efficiency especially for high sensitivity resists. This article presents current work done at the College of Nanoscale Science and Engineering where the authors investigated three different commercially available resist systems, namely, SU-8, NEB-31, and HSQ, which have a range of sensitivity from close to the shot noise limit to slow material with high resolution. The authors present the results obtained from these resists with their respective critical dimension, line edge roughness (LER), and line width roughness (LWR) values that correlate with sensitivity and are consistent with the well known resolution, line edge roughness, sensitivity trade-off. Due to the inability of tools to deliver low doses at step sizes close to grid size limit of the tool, the ultimate resolution limit of SU-8 and NEB-31 with acceptable LER and LWR is yet to be determined.

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The black border is a frame created by removing all the multilayers on the EUV mask in the region around the chip. It is created to prevent exposure of adjacent fields when printing an EUV mask on a wafer. Papers have documented its effectiveness [1] . As the technology transitions into manufacturing, the black border must be optimized from the initial mask making process through its life. In this work, the black border is evaluated in three stages: the black border during fabrication, the final sidewall profile, and extended lifetime studies.This work evaluates the black border through simulations and physical experiments. The simulations address concerns for defects and sidewall profiles. The physical experiments test the current black border process. Three masks are used: one mask to test how black border affects the image placement of features on mask and two masks to test how the multilayers change through extended cleans. Data incorporated in this study includes: registration, reflectivity, multilayer structure images and simulated wafer effects.By evaluating the black border from both a mask making perspective and a lifetime perspective, we are able to characterize how the structure evolves. The mask data and simulations together predict the performance of the black border and its ability to maintain critical dimensions on wafer. In this paper we explore what mask changes occur and how they will affect mask use.