Operating principle and integration of in-plane gate logic devices

Komatsuzaki, Yuji; Saba, K.; Onomitsu, Koji; Yamaguchi, Hiroshi; Horíkoshi, Yoshiji

doi:10.1063/1.3670352

Cited by 8 publications

(2 citation statements)

References 17 publications

(5 reference statements)

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“…However, fabrication of these junctionless FETs needs stringent requirements and is still rather challenging. As a novel concept for promising functional devices, in-plane gate transistors have also been developed with the potential to simplify the processing procedure with multi applications, such as logic devices (7), rectifier (8,9), negative differential resistance devices (10), etc. Recently, a self-assembled patterned channel layers have been achieved by applying only one nickel shadow mask.…”

Section: Introductionmentioning

confidence: 99%

Laser Patterned Junctionless In-Plane-Gate Oxide Thin-Film Transistors Arrays

Zhu

Wan

2013

ECS Trans.

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A novel laser scribing process was successfully developed in fabricating junctionless low-voltage oxide-based thin-film transistors (TFTs) arrays without any mask and photolithography steps at room temperature. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same thin indium-tin-oxide films without any intentional source/drain junction deposition process. Effective field-effect modulation of the drain current has been realized. Such junctionless in-plane-gate TFTs exhibit a good electrical performance with a small threshold voltage (-0.7V), a small subthreshold swing (0.25V/decade), a high mobility (~12.6cm 2 /Vs), and a large on/off ratio (>10 6 ), respectively. The developed laser scribing technology is highly desirable in terms of the low-cost fabrication process.

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Section: Introductionmentioning

confidence: 99%

Laser Patterned Junctionless In-Plane-Gate Oxide Thin-Film Transistors Arrays

Zhu

Wan

2013

ECS Trans.

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“…However, fabrication of these junctionless FETs is still rather challenging. As an interesting concept for promising functional devices, in-plane gate transistors have been developed as logic devices, 13 rectifier, 14,15 negative differential resistance devices, 16 etc. Laser scribing process was also proposed for source/drain patterning.…”

mentioning

confidence: 99%

Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function

Zhu

Zhou

et al. 2013

Applied Physics Letters

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Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The neuron transistors are composed of a bottom indium-tin-oxide floating gate and multiples of in-plane control gates. The control gates, coupling with the floating gate, control the “on” and “off” of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.

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