Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function

Abstract

Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The neuron transistors are composed of a bottom indium-tin-oxide floating gate and multiples of in-plane control gates. The control gates, coupling with the floating gate, control the “on” and “off” of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.

A MoS2-based coplanar neuron transistor for logic applications

“…Previously reported coplanar neuron transistors based on amorphous ITO and IGZO typically work at a low frequency of 0.01-0.05 Hz [10][11][12][13], which is much lower than the average firing rate of biological neurons (∼5 Hz [1]). In this work, the MoS 2 -based neuron transistor can work ata higher frequency up to 14.6 Hz, which is close to the firing rate of biological neurons and more plausible for neuromorphic application.…”

“…However, the reported coplanar neuron transistors typically work in a low frequency of 0.01-0.05 Hz, which is much lower than the average firing rate of biological neurons (5 Hz) [1]. For example, AND logic was demonstrated in a coplanar-gate neuron transistor using an ITO thin film as the channel layer with an operating frequency of ∼0.01 Hz [10]; OR and AND functions were wasdemonstrated in neuron transistors using aproton conductor as the channel layer with an operating frequency of 0.05 Hz [11,12]. We previously reported a InGaZnO-based neuron transistor thatcan be used to implement abacus-like function, OR and AND logic, and it works ata frequency of ∼0.01 Hz [13].…”