Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study

Larki, Farhad; Dehzangi, Arash; Islam, Md. Shabiul; Ali, Sawal Hamid Md; Abedini, Alam; Majlis, Burhanuddin Yeop

doi:10.1007/s12633-017-9606-1

Cited by 6 publications

(1 citation statement)

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“…The fabrication of DGJLTs through scanning probe lithography (SPL) has been reported in [34][35][36]. Moreover, the operation mechanism and channel geometrical effect (source/drain extensions, channel thickness and width) on the performance of device have also been investigated [37][38][39][40]. The main focus of the present work is devoted towards the impact of lateral gates engineering and particularly lateral gate length (L G ) and air gap between the lateral gates and channel on output characteristics of DGJLTs.…”

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confidence: 99%

Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors

et al. 2019

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In this paper, we investigate the effect of lateral gate design on performance of a p-type double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of lateral gate length, which modifies the real channel length of the device and gate gap variation down to 50 nm which have been found to be the most influential factors in the performance of the device have been comprehensively investigated. The characteristics are demonstrated and compared with a nominal DGJLTs through three-dimensional technology computer-aided design (TCAD) simulation. At constant channel geometry (thickness and width), when the lateral gate length decreases, the results show constant flatband drain current characteristics while the OFF state current (IOFF) increases significantly. On the other hand, by decreasing the air gap the subthreshold current considerably decreases while the flatband current is constant. Moreover, at a certain gate gap, the gates lose control over the channel and the device simply works as a resistor. Electric field component, carriers’ density, band edge energies, and recombination rate of the carriers inside the channel in depletion and accumulation regimes are analysed to interpret the variation of output characteristics.

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