Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage

Bailey, Christopher G.; Forbes, David V.; Polly, Stephen J.; Bittner, Zachary S.; Dai, Yushuai; Mackos, Chelsea; Raffaelle, Ryne P.; Hubbard, Seth M.

doi:10.1109/jphotov.2012.2189047

Cited by 154 publications

(77 citation statements)

References 27 publications

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“…They both produce confined states (the pedestal is attractive for the negative-mass holes) with energy levels which are within the band gap of the host material; those derived from the CB offset form the IB. Unfortunately, efficiency higher than a control cell without QDs has seldom been produced, and when so, only marginally [6]. The main reason is that the absorption of low energy (sub-bandgap) photons by the QDs is too weak.…”

Section: Introductionmentioning

confidence: 99%

The effect of band offsets in quantum dots

Panchak

Ĺuque

Vlasov

et al. 2016

Solar Energy Materials and Solar Cells

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The insertion of quantum dots in a host material produces band offsets which are greatly dependent on the field of strains brought about by this insertion. Based on the Empiric KP Hamiltonian model, the energy spectrum of the quantum dot/host system is easily calculated and a relationship between the conduction and valence band offsets is determined by the energy at which the lowest peak of the subbandgap quantum efficiency of an intermediate band solar cell is situated; therefore knowledge of the valence band offset leads to knowledge of both offsets. The calculated sub-bandgap quantum efficiency due to the quantum dot is rather insensitive to the value of the valence band offset. However, the calculated quantum efficiency of the wetting layer, modeled as a quantum well, is sensitive to the valence band offset and a fitting with the measured value is possible resulting in a determination of both offsets in the finished solar cell with its final field of strains. The method is applied to an intermediate-band solar cell prototype made with InAs quantum dots in GaAs.

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Section: Introductionmentioning

confidence: 99%

The effect of band offsets in quantum dots

Panchak

Ĺuque

Vlasov

et al. 2016

Solar Energy Materials and Solar Cells

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“…The maximum photons that can be absorbed by a typical standard GaAs solar cell is around 875 nm [4]. After inserting the quantum dots (GaSb), photons with wavelength 900 to 1200nm are also able to be absorbed.…”

Section: External Quantum Efficiency(eqe) Resultsmentioning

confidence: 99%

Modeling and Simulation of GaSb/GaAs Quantum Dot for Solar Cell

et al. 2015

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The main limitations of the conventional solar conversion device is that low energy photons cannot excite charge carriers to the conduction band, therefore do not contribute to the device's current, and high energy photons are not efficiently used due to a poor match to the energy gap. Currently, Quantum Dot Solar Cells QDSC are one of the most active research fields in the third generation solar cells which can resolve this problem. In the present work, we are interested in modeling and simulating of both standard GaAs p-i-n solar cell and GaSb/GaAs Quantum Dot Solar Cell QDSC. When comparing 40-layers GaSb/GaAs quantum dot solar cell with standard GaAs solar cell, the conversion efficiency in simulation results increased from 16.48 % to 22.46 %, which is relatively 36.3% increase. Also, the absorption range edge of photons with low energies extended from 900 to 1200 nm. The results reveal that the GaSb/GaAs quantum dot solar cell manifests much larger power conversion efficiency than that of p-in junction solar cells.

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“…However, even with the present low density of QDs, better efficiency has already been recently achieved with a QD solar cell than with a similar one without QDs. 31 To interpret these results we have to assume a longer lifetime (which is thermodynamically possible) and a stronger light absorption. All this is possible and does not change the qualitative aspects discussed here.…”

Section: Discussionmentioning

confidence: 99%

Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density

Tobias

Ĺuque

Antolín

et al. 2012

Journal of Applied Physics

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Charge-induced series resistance switching in GaAs solar cells AIP Advances 2, 042194 (2012) Schottky-barrier solar cell based on layered semiconductor tungsten disulfide nanofilm Appl. Phys. Lett. 101, 263902 (2012) Efficiency enhancement in mesogenic-phthalocyanine-based solar cells with processing additives APL: Org. Electron. Photonics 5, 274 (2012) Efficiency enhancement in mesogenic-phthalocyanine-based solar cells with processing additives Appl. Phys. Lett. 101, 263301 (2012) Improved performance of flexible amorphous silicon solar cells with silver nanowires J. Appl. Phys. 112, 124320 (2012) Additional information on J. Appl. Phys. The behavior of quantum dot, quantum wire, and quantum well InAs/GaAs solar cells is studied with a very simplified model based on experimental results in order to assess their performance as a function of the low bandgap material volume fraction f LOW . The efficiency of structured devices is found to exceed the efficiency of a non-structured GaAs cell, in particular under concentration, when f LOW is high; this condition is easier to achieve with quantum wells. If three different quasi Fermi levels appear with quantum dots the efficiency can be much higher.

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Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage

Cited by 154 publications

References 27 publications

The effect of band offsets in quantum dots

The effect of band offsets in quantum dots

Modeling and Simulation of GaSb/GaAs Quantum Dot for Solar Cell

Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density

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