Modeling and Simulation of GaSb/GaAs Quantum Dot for Solar Cell

Abstract

The main limitations of the conventional solar conversion device is that low energy photons cannot excite charge carriers to the conduction band, therefore do not contribute to the device's current, and high energy photons are not efficiently used due to a poor match to the energy gap. Currently, Quantum Dot Solar Cells QDSC are one of the most active research fields in the third generation solar cells which can resolve this problem. In the present work, we are interested in modeling and simulating of both standard GaAs p-i-n solar cell and GaSb/GaAs Quantum Dot Solar Cell QDSC. When comparing 40-layers GaSb/GaAs quantum dot solar cell with standard GaAs solar cell, the conversion efficiency in simulation results increased from 16.48 % to 22.46 %, which is relatively 36.3% increase. Also, the absorption range edge of photons with low energies extended from 900 to 1200 nm. The results reveal that the GaSb/GaAs quantum dot solar cell manifests much larger power conversion efficiency than that of p-in junction solar cells.

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

“…The Masetti mobility model and the Shockley-Read-Hall recombination theory using concentrationdependent lifetime model are well detailed in Reference 28. Radiative recombination has been neglected due to the fact that simulations are performed at T = 300 K. 29 The EQE is obtained by using the following equation:…”

“…The Masetti mobility model and the Shockley‐Read‐Hall recombination theory using concentration‐dependent lifetime model are well detailed in Reference 28. Radiative recombination has been neglected due to the fact that simulations are performed at T = 300 K 29 . The EQE is obtained by using the following equation: where J ph ( λ ) is the theoretical photocurrent delivered by the solar cell and given by the continuity equations, λ i and λ f are the initial and final wavelengths, respectively, and F ( λ ) is the spectral solar irradiance.…”

Propiedades físicas de nanoestructuras de GaSb para aplicaciones en espintrónica

“…En el desarrollo de nuevos materiales, el estudio de las propiedades físicas de semiconductores III-V tales como GaAs, InAs y InSb (Mosher y Soukup, 1982;Hongwei et al, 1998;Carroll y Spivak, 1966), ha sido de gran importancia para el desarrollo de aplicaciones en dispositivos ópticos (Bonilla-Marin, 2007), electro-ópticos (Kluth et al, 2005;Glemza et al, 2017) celdas solares (Benyettou et al, 2015), entre otros. En particular, el semiconductor GaSb se ha utilizado en la fabricación de detectores de luz láser, dispositivos de alta frecuencia, sensores de radiación infrarroja y celdas solares, debido a que responde a un amplio rango de longitudes de onda en la región del infrarrojo (Benyettou et al, 2015).…”

Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

“…Recently, type-II GaSb/GaAs nanostructures have gained a lot of attention owing to their long carrier lifetime as a result of the reduced electron-hole wave function overlap [18][19][20]. Both theoretically and experimentally, GaSb/GaAs QD and QR solar cells have shown an extended spectral response and efficient carrier extraction [21][22][23][24][25][26][27][28]. Even type-II nanostructures possess a long carrier lifetime.…”