Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density

Tobias, Irwin; Ĺuque, A.; Antolín, E.; García‐Linares, Pablo; Ramiro, I.; Hernández, E.; Martı́, Antonio

doi:10.1063/1.4770464

Cited by 11 publications

(4 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Simulation results here are consistent with the results reported in literature. 177,178 Experimental study of InAs/GaAs QD-IBSC under light concentration has gradually drawn attention. 180 Takata et al have reported that in a well-developed cell, 181 a 50-layers stacked InAs/GaNAs QDSC with $15.7% efficiency at 1 sun has been shown to improve to efficiency of $20.3% at 100 suns and $21.2% at 1000 suns illumination.…”

Section: Concentrated Photovoltaic (Cpv) Characterizationmentioning

confidence: 99%

Intermediate band solar cells: Recent progress and future directions

Okada

Ekins-Daukes

Kita

et al. 2015

Applied Physics Reviews

336

235

View full text Add to dashboard Cite

Extensive literature and publications on intermediate band solar cells (IBSCs) are reviewed. A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs, the device physics, and the carrier dynamics processes with a particular emphasis on the two-step inter-subband absorption/recombination processes that are of paramount importance in a successful implementation high-efficiency IBSC. The experimental solar cell performance is further discussed, which has been recently demonstrated by using highly mismatched alloys and high-density quantum dot arrays and superlattice. IBSCs having widely different structures, materials, and spectral responses are also covered, as is the optimization of device parameters to achieve maximum performance.

show abstract

Section: Concentrated Photovoltaic (Cpv) Characterizationmentioning

confidence: 99%

Intermediate band solar cells: Recent progress and future directions

Okada

Ekins-Daukes

Kita

et al. 2015

Applied Physics Reviews

336

235

View full text Add to dashboard Cite

show abstract

“…where J is the current density, and the subscripts n and p indicate the electron and hole cases, respectively. For the bulk regions, the electron and hole concentrations are described in terms of the effective density of states (N c and N v ), conduction and valence band edge energies (E c and E v ), and quasi-Fermi levels (E Fn and E Fp ) [42]:…”

Section: Modeling and Simulationmentioning

confidence: 99%

Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

Kunrugsa¹

2018

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar cell are investigated. The solar cell is designed as a p-i-n GaAs structure where a single layer of GaAsSb QDs is introduced into the intrinsic region. The current density–voltage characteristics of QD solar cells are derived from Poisson’s equation, continuity equations, and the drift-diffusion transport equations, which are numerically solved by a finite element method. Furthermore, the transition energy of a single GaAsSb QD and its corresponding wavelength for each As mole fraction are calculated by a six-band k · p model to validate the position of the absorption edge in the external quantum efficiency curve. A GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4 provides the best power conversion efficiency. The overlap between electron and hole wave functions becomes larger as the As mole fraction increases, leading to a higher optical absorption probability which is confirmed by the enhanced photogeneration rates within and around the QDs. However, further increasing the As mole fraction results in a reduction in the efficiency because the absorption edge moves towards shorter wavelengths, lowering the short-circuit current density. The influences of the QD size and density on the efficiency are also examined. For the GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4, the efficiency can be improved to 26.2% by utilizing the optimum QD size and density. A decrease in the efficiency is observed at high QD densities, which is attributed to the increased carrier recombination and strain-modified band structures affecting the absorption edges.

show abstract

“…[11][12][13][14][15] In another important point, highly dense QDs are needed to increase the power conversion efficiency. 16,17) Recently, we demonstrated in-plane ultrahigh-density InAs QDs with 0.5-1.0 × 10 12 cm −2 on a GaAsSb buffer layer and an InAsSb wetting layer (WL) on GaAs(001) substrates by molecular beam epitaxy (MBE). 15,[18][19][20] The heterostructure of these highdensity InAs QDs and GaAsSb buffer (or capping) layers forms the type-II band structure, in which electrons and holes are separated and confined, respectively, in the InAs QD level and the GaAsSb valence band.…”

Section: Introductionmentioning

confidence: 99%

Optical transition and carrier relaxation in a type-II InAs/GaAsSb quantum dot layer

Sugiyama

Tatsugi

Sogabe

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In-plane ultrahigh-density InAs quantum dots (QDs) were grown on the GaAsSb buffer layer by molecular beam epitaxy. Photoluminescence (PL) properties of the InAs QDs/GaAsSb layer were measured under 1.58 eV and 1.44 eV light excitations, which were GaAs and InAs QD/wetting layer (WL)/GaAsSb excitations. For the GaAs excitation, PL spectra were due to a type-II transition from the ground state (GS) of the QD conduction band to the GaAsSb valence band. This PL spectrum did not depend on the measurement position because of the electron filling into lower GS levels. For the InAs QD/WL excitation, PL spectra originated from the crossed transitions of localized bound excitons between QD excited states (ES) and the WL valence band, and depended on the measurement position. Furthermore, excitation power and temperature dependences of the PL spectra were measured to discuss carrier dynamics.

show abstract

Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density

Cited by 11 publications

References 29 publications

Intermediate band solar cells: Recent progress and future directions

Intermediate band solar cells: Recent progress and future directions

Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

Optical transition and carrier relaxation in a type-II InAs/GaAsSb quantum dot layer

Contact Info

Product

Resources

About