Open circuit voltage decay in p-n junction diodes at high levels of injection

Jain, S.C.; Ray, U. C.; Muralidharan, R.; Tewary, Vinod K.

doi:10.1016/0038-1101(86)90079-1

Cited by 10 publications

(2 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Experimentally, global OCVD decay can either slow down or speed up according to recombination into the emitter [4] and the SCR [8], to SCR capacitance (also called depletion capacitance) (cf. Fig.1 region (iii)) [8], high injection level [5], low shunt resistance [8] and opencircuiting element [16]. In transient regime, the region (ii) is due to minority charge carriers diffusion/recombination and is represented by the so-called "diffusion capacitance" [8] while region (iii) is due to the "SCR capacitance" driven by majority charge carriers.…”

Section: Ocvd Theorymentioning

confidence: 99%

“…such as back surface recombination velocity [3] (combination with short-circuit current decay), level of injection [4,5], series resistance [6], diffusion length [7] and capacitance [8] (corresponds to the voltage when space charge region (SCR) capacitance equals diffusion capacitance). On the other hand, it requires a junction (p-n or Schottky).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Open-Circuit Voltage Decay Simulations on Silicon and Gallium Arsenide p-n Homojunctions: Design Influences on Bulk Lifetime Extraction

Lemaire

Pérona

Caussanel

et al. 2020

Microelectronics Journal

View full text Add to dashboard Cite

Open-Circuit Voltage Decay (OCVD) method was investigated for few decades as a simple and convenient method to characterize effective lifetime into Ge and Si p-n homojunctions. Minority carrier lifetime (MCL) is an important parameter to optimize device design where being able to investigate one type of carriers is an important goal. The p-n homojunction design is of major importance to reach that purpose by OCVD. We carried out Technology Computer Aided-Design simulations of the OCVD signal. The study focused on Si and GaAs p-n homojunctions. We looked into bulk thickness and doping level influences on bulk lifetime extraction. Previously, those influences have not been quantified for Si and never investigated for GaAs. MCL accurate extraction from bulk required a bulk thickness at least 4 times higher than diffusion length and emitter doping levels at least 2 orders of magnitude higher than bulk. Likewise, the paper shows different accuracy of extraction between GaAs/Si and p-type/n-type bulk in p-n homojunction.

show abstract