Open-Circuit Voltage Decay Simulations on Silicon and Gallium Arsenide p-n Homojunctions: Design Influences on Bulk Lifetime Extraction

Abstract

Open-Circuit Voltage Decay (OCVD) method was investigated for few decades as a simple and convenient method to characterize effective lifetime into Ge and Si p-n homojunctions. Minority carrier lifetime (MCL) is an important parameter to optimize device design where being able to investigate one type of carriers is an important goal. The p-n homojunction design is of major importance to reach that purpose by OCVD. We carried out Technology Computer Aided-Design simulations of the OCVD signal. The study focused on Si and GaAs p-n homojunctions. We looked into bulk thickness and doping level influences on bulk lifetime extraction. Previously, those influences have not been quantified for Si and never investigated for GaAs. MCL accurate extraction from bulk required a bulk thickness at least 4 times higher than diffusion length and emitter doping levels at least 2 orders of magnitude higher than bulk. Likewise, the paper shows different accuracy of extraction between GaAs/Si and p-type/n-type bulk in p-n homojunction.

Modulating Carrier Transfer over Carbazolic Conjugated Microporous Polymers via Donor Structural Design for Functionalization of Thiophenols

“…The average lifetimes of the photogenerated carriers measured in CbzCMP-5 are about 5.0 and 2.5 times larger than those of CbzCMP-4 and CbzCMP-6, respectively, implying that CbzCMP-5 can effectively suppress the radiative recombination of the photogenerated excitons (Figure 3e). 31,56 Additionally, the photoluminescence (PL) decay curves of CbzCMP-n (n = 4− 6) indicated that the average lifetimes of the photogenerated charge carriers for CbzCMP-n (n = 4−6) are 1.12, 2.07, and 1.21 ns, respectively (Figure 3f). Generally, the longer decay lifetime in the polymers usually corresponds to a slower charge recombination, faster electron transfer of the excited states, a more prominent nonradiative rate, and further improvements of the photocatalytic activities in the case of CbzCMP-5.…”

Study of deep levels in the Mg2Si grown by vertical Bridgeman method

“…By using the slope of the diode voltage decay, the minority-carrier lifetime (τ p : whole lifetime) in n-Mg 2 Si can be obtained using Eq. ( 2) [29][30][31][32] ⎛ ⎝ ⎞ ⎠…”