OPC and PSM design using inverse lithography: a nonlinear optimization approach

Poonawala, Amyn; Milanfar, Peyman

doi:10.1117/12.655904

Cited by 51 publications

(60 citation statements)

References 13 publications

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“…where J 1 is the Bessel function of the first kind, order one [22], NA is the numerical aperture of the projection lens, and λ is the source light wavelength. 2) Once the optical image falls on the photoresist-coated wafer, the photoresist is developed and etched based on image intensity at the corresponding wafer location.…”

Section: ) Illumination Modulementioning

confidence: 99%

“…If the photoresist material is positive (negative) and the image intensity at a certain location is greater (lesser) than a specific threshold, the resist gets etched out. The resulting image is called the resist or pattern image I and is often calculated as follows [22]:…”

Section: ) Illumination Modulementioning

confidence: 99%

“…Let M y x ∈ {0, 1} denote the pixels at the location x, y for the mask M where zero (one) refers to opaque (transparent) pixels. For a coherent imaging system, the aerial image is given by [19] and [22] I a = |M * h| 2 (3)…”

Section: ) Illumination Modulementioning

confidence: 99%

“…Then, the polygons are broken down into edge segments that are iteratively moved with the goal of improving a cost function [17]. 2) Pixel-based OPC represents each pixel of the mask as a 0 or 1 decision and models the printed pattern as a continuous function [22]. Then, an optimization problem [referred to as inverse lithography (ILT)] is solved by using a gradient descent-like algorithm.…”

Section: Optical Proximity Correction (Opc)mentioning

confidence: 99%

See 3 more Smart Citations

Improving the Quality of Delay-Based PUFs via Optical Proximity Correction

Forte

Srivastava

2013

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Silicon physically unclonable functions (PUFs) are circuits that exploit modern manufacturing variations to generate unique signatures for chip authentication and cryptographic key generation. Existing research has focused on improving PUF quality at architectural or design levels, but has ignored opportunities available during fabrication, which is the source of systematic and random variation in (ICs)/PUFs. For typical ICs (where security is not a concern), optical proximity correction (OPC) is used to suppress both these types of variations. However, several prior works have shown that only systematic variations negatively impact PUF quality and random variations are beneficial for PUFs. In this paper, we propose two PUF-aware OPC cost functions: 1) P-OPC generates a PUF lithography mask that increases all variations in PUF circuitry (the opposite of state-of-the-art OPC), and 2) SVC-OPC generates mask patterns that reduce the systematic variation found in PUFs for better quality. Simulation results for ring oscillator (RO) PUFs show that the proposed techniques can improve PUF signature quality compared to current state-of-the-art OPC.

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Section: ) Illumination Modulementioning

confidence: 99%

Section: ) Illumination Modulementioning

confidence: 99%

Section: ) Illumination Modulementioning

confidence: 99%

Section: Optical Proximity Correction (Opc)mentioning

confidence: 99%

See 2 more Smart Citations

Improving the Quality of Delay-Based PUFs via Optical Proximity Correction

Forte

Srivastava

2013

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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“…Hence, there has recently been a revival of interest in pixel-based ILT approaches. [4][5][6][7] In this work, we extend our earlier proposed singleexposure ILT framework 7 to double-exposure lithography ͑DEL͒ systems. Double-exposure lithography has gained a lot of importance recently and is tipped as one of the important technologies for enabling 45 nm and smaller technology nodes.…”

Section: Introductionmentioning

confidence: 99%

Double-exposure mask synthesis using inverse lithography

Poonawala

Milanfar

2007

J. Micro/Nanolith. MEMS MOEMS

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Inverse lithography mask design and double-exposure lithography are two technologies that have gained a lot of attention in the recent past. Inverse lithography consists of synthesizing the input mask that leads to the desired output wafer pattern by inverting the mathematical forward model from mask to wafer. Double-exposure lithography uses two pairs of mask and exposure to print a single ͑desired͒ wafer pattern. It usually involves splitting the latter into two parts. In this work, we present some preliminary results in our unique effort to combine the previous two powerful techniques. The goal is to use the inverse imaging approach to automatically synthesize the masks required to print the desired wafer pattern employing double-exposure lithography. We employ the pixel-based mask representation, analytically calculate the gradient, and use a cyclic coordinate descent optimization algorithm to synthesize the two masks. We present results for chromeless phase-shift masks for an idealized case of a coherent imaging system ͑ =0͒ using the Kirchhoff approximation. The results indicate that our algorithm automatically splits the target pattern into two ͑overlapping͒ parts, which are used separately during the individual exposures. Furthermore, the proposed approach is also capable of resolving the phase conflicts. The comparison with a single-exposure case indicates a superior contrast and no hot-spots.

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2010

Computational Lithography

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OPC and PSM design using inverse lithography: a nonlinear optimization approach

Cited by 51 publications

References 13 publications

Improving the Quality of Delay-Based PUFs via Optical Proximity Correction

Improving the Quality of Delay-Based PUFs via Optical Proximity Correction

Double-exposure mask synthesis using inverse lithography

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