One-Shot Exposure for Patterning Two-Dimensional Photonic Crystals to Enhance Light Extraction of InGaN-Based Green LEDs

Hsieh, Mei-Li; Lo, Kuo-Chang; Lan, Yi-Sheng; Yang, Shieh‐Yueh; Lin, Chwan-Fwu; Liu, Hangzan; Kuo, Hao‐Chung

doi:10.1109/lpt.2007.912510

Cited by 24 publications

(3 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2(a) and (b) show measured -characteristics of PD_A and PD_B, respectively. Carrier distribution profile in these two samples can then be determined by [31] (1) and (2) where is the depth measured from the sample surface, carrier concentration, is a function of depth, is a relative dielectric constant of semiconductor, is the dielectric constant of free space, is the area of the Schottky contact, and is the measured capacitance. Knowing the relative dielectric constant of GaN (9.5) and AlN (9.0), we can estimate relative dielectric constant of .…”

mentioning

confidence: 99%

AlGaN/GaN Schottky Barrier Photodetector With Multi-${\rm Mg}_{\rm x} {\rm N} _{\rm y} $/GaN Buffer

et al. 2009

View full text Add to dashboard Cite

AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-Mg x N y /GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-Mg x N y /GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.Index Terms-AlGaN/GaN heterostructure, multi-Mg x N y /GaN buffer, Schottky barrier photodetector.

show abstract

mentioning

confidence: 99%

AlGaN/GaN Schottky Barrier Photodetector With Multi-${\rm Mg}_{\rm x} {\rm N} _{\rm y} $/GaN Buffer

et al. 2009

View full text Add to dashboard Cite

show abstract

“…Two main treatments were used for the enhancement of extraction efficiency: (i) refractive index matching of the semiconductor-air interface and (ii) surface patterning by rough and optimized structures. Both have considerable effect on minimizing the total internal reflection of the diode surface [1,2]. The enhancement of the extraction efficiency in LEDs by surface patterning requires an optimized design leading to the photonic crystal (PhC) structures that optimize the interaction of the guided modes with the photonic band gap (PBG) of PhCs.…”

Section: Introductionmentioning

confidence: 99%

Complex Analysis of Emission Properties of LEDs with 1D and 2D PhC Patterned by EBL

et al. 2020

View full text Add to dashboard Cite

In this paper, we present the optical and electrical properties of surface-patterned GaAs-based Multiquantum Well (MQW) light emitting diodes (LEDs) with one- and two-dimensional photonic crystal (PhC) structures. Optical properties were analyzed in the near and far field, measured by a near-field scanning optical microscope and with a goniophotometer. We demonstrated a strong effect of patterned PhC on the radiation properties and the light extraction efficiency. Enormous surface emission enhancement reaching 110% confirmed the strong effect of the patterned structure on the coupling of the guided modes into the surface emission. Additionally, the considerable effect of the PhC structure diffraction on radiation pattern was confirmed in the near and far field and is in good agreement with the simulated shape of the optical field.

show abstract

“…On the other hand, PhC structures have also been investigated as a potential candidate for improving the extraction efficiency of LEDs [7][8][9][10]. While geometric factors of the 2D PhC structure -such as lattice shape, air hole size, and dielectric constants of used materials -play a role in determining the directionality and the far-field profile; for the light extraction efficiency the etch depth is important [11].…”

Section: Introductionmentioning

confidence: 99%

Irregular 2D structure in the light emitting diode surface patterned by NSOM lithography

et al. 2012

View full text Add to dashboard Cite

In this paper, we present near-field scanning optical microscope (NSOM) in illumination mode as effective tool for semiconductor device surface patterning. In the illumination mode, the non-contact mode of the NSOM lithography is performed, where the fiber probe exposes defined spots in thin photoresist layer. As the scanning technique allows irregular two-dimensional patterning of different surfaces, this was applied on the GaAs/AlGaAs based light emitting diode surface. Patterned surface was analyzed by optical microscope and atomic force microscope.Keywords-near-field scanning optical microscope lithography, irregular 2D structure, light emitting diode surface patterning, photonic structure.

show abstract

One-Shot Exposure for Patterning Two-Dimensional Photonic Crystals to Enhance Light Extraction of InGaN-Based Green LEDs

Cited by 24 publications

References 13 publications

AlGaN/GaN Schottky Barrier Photodetector With Multi-${\rm Mg}_{\rm x} {\rm N} _{\rm y} $/GaN Buffer

AlGaN/GaN Schottky Barrier Photodetector With Multi-${\rm Mg}_{\rm x} {\rm N} _{\rm y} $/GaN Buffer

Complex Analysis of Emission Properties of LEDs with 1D and 2D PhC Patterned by EBL

Irregular 2D structure in the light emitting diode surface patterned by NSOM lithography

Contact Info

Product

Resources

About