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AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-Mg x N y /GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-Mg x N y /GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.Index Terms-AlGaN/GaN heterostructure, multi-Mg x N y /GaN buffer, Schottky barrier photodetector.

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