One-dimensional model of the programming kinetics of conductive-bridge memory cells

Abstract

A one-dimensional model of filament growth in conductive-bridge memory cells is presented, in which ions are thermally excited from the anode surface into the electrolyte, pulled by the electric field through a periodic series of wells and reduced at the cathode to form a metallic filament. The voltage, temperature, and thickness dependencies of the time required to program a cell are calculated, and material parameters for Ag/GeS2/W cells are obtained by comparison to experiment. The relation of the model to recent observations of quantized conductance is highlighted, as is the need for further study of the Ag/GeS2 interface.

Volatile resistive switching in Cu/TaOx/δ-Cu/Pt devices

“…The exponential relation has been explained by the migration of Cu þ ions, the redox reaction on the electrode, and the nucleation of Cu atoms. [10][11][12] In the following, the volatile switching behavior has been characterized and compared with nonvolatile switching. The SET voltages at different voltage ramp rates are shown in Fig.…”

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

“…[20] However, only a few results have been published so far to study resistive switching on a microscopic scale. [21,22,23,24,25] All the investigations are mainly focusing on initial filament growth rather than on complete formation and dissolutions cycles. Recently, Menzel et al reported on results from two-dimensional kinetic MonteCarlo simulations which allow for several leading physical and chemical processes underlying resistive switching in electrochemical metallization cells.…”

“…[21,22,23,24,25,26] Particularly, the redox reactions at the electrodes are important. The related rates of oxidation of metal atoms and reduction of metal ions are assumed to be constants weighted by Arrhenius-like probabilities which depend on the local electric field and therefore on the local potential.…”

Switching kinetics of electrochemical metallization memory cells

“…switching time (equivalent to the Faradaic reaction rate), the activation energies and the current-time (I-t) relaxation it has been shown that the formation of the critical nucleus is rate limiting and not the electron charge transfer or the diffusion/hopping within this system. Despite various simulation models on the switching kinetics 37,45,46 a complete theoretical model covering all limiting factors is yet missing.…”