On the topographic and optical properties of SiC/SiO2 surfaces

Abstract

Abstract:The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO 2 structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.

Sonochemically Synthesized Quantum Nanocrystals of Cubic CuInS2: Evidence for Multifractal Surface Morphology, Size-Dependent Structure, and Particle Size Distribution

“…For example, two fractal structures with quite different textures or space-filling characteristics could have the same (or quite similar) fractal dimensions. In the present study, as an additional fractal metrics, we have relied on the concept of lacunarity, − as introduced by Mandelbrot. The etymology of the term itself comes from the Latin word for “gap” or “lake”, as it is a measure of the degree of translational invariance or homogeneity of a fractal structure.…”