Passivation of Si-based structures in HCN and KCN solutions

Pinčík, Emil; Kobayashi, Hikaru; Rusnák, Jaroslav; Takahashi, Masatoshi; Mikula, Milan; Kim, Woo Byoung; Kučera, M.; Brunner, Róbert; Jurečka, Stanislav

doi:10.1016/j.apsusc.2012.02.121

Cited by 9 publications

(8 citation statements)

References 24 publications

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“…The defect distribution resembles a nearly intrinsic energetic distribution D it (E). So far, nearly similar results have only been reported with significantly more complex oxidation procedures which require a complex sequence of surface pre-treatment steps prior to oxidation, like plasma oxidation under ultra high vacuum (UHV) with elaborate surface pre-treatment [13]- [15], surface pre-conditioned multi-step NAOS oxidation with subsequent passivation in hydrogen cyanide (HCN) and post metallization anneal (PMA) [15]- [17], or complex multi-stage thermal oxidation with surface pre-conditioning for MOS technology [18].…”

Section: Introductionmentioning

confidence: 65%

High quality tunneling oxides for passivated contacts and heterojunctions for high efficiency silicon solar cells

Gad

Vossing

Balamou

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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We analyze the chemical passivation quality of silicon oxide-nanolayers on crystalline silicon wafers prepared by different oxidation methods with surface photo voltage and quasisteady-state photo conductance measurements. It is shown that for wet chemical oxidation and plasma oxidation, adequate passivation of the interface defects is achieved by subsequent anneal in forming gas environment. Furthermore, we present a simple oxidation method by means of rapid thermal oxidation, which requires no complex surface pre-treatment or surface preconditioning after cleaning. By rapid thermal oxidation (RTO) in a gaseous mixture of argon and oxygen and subsequent anneal in forming gas, a reproducible preparation method of high-quality ultra-thin oxide-nanolayers with a nearly intrinsic energetic distribution of interface states and a defect density of states of only 1 x 10 12 cm -2 eV -1 at the minimum of the distribution is demonstrated.

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Section: Introductionmentioning

confidence: 65%

High quality tunneling oxides for passivated contacts and heterojunctions for high efficiency silicon solar cells

Gad

Vossing

Balamou

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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“…The defect distribution resembles a nearly intrinsic energetic distribution D it (E). So far, nearly similar results have only been reported with significantly more complex oxidation procedures which require a complex sequence of surface pre-treatment steps prior to oxidation, like plasma oxidation under ultra high vacuum (UHV) with elaborate surface pre-treatment [44,45,48], surface pre-conditioned multi-step NAOS oxidation with subsequent passivation in hydrogen cyanide (HCN) and post metallization anneal (PMA) [49][50][51], or complex multi-stage thermal oxidation with surface preconditioning for MOS technology [37].…”

Section: Introductionmentioning

confidence: 78%

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Gad

Vossing

Balamou

et al. 2015

Applied Surface Science

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“…The deposition was performed by commercial Samco PDM-304N PECVD apparatus at rf power density of 0.03 Wcm -2 [9]. For the intrinsic a-Si:H deposition the gas mixture of SiH 4 diluted by H 2 (at the pressure of 120 Pa) was applied.…”

Section: Methodsmentioning

confidence: 99%

“…Optical transmittances at nearly normal incidence were measured in the spectral range of (400 -1100) nm by UV/Vis AvaSpec-2048 spectrophotometer with air blank reference channel. Prior information of similar samples deposited on glass and crystalline Si substrates was gathered by FTIR spectroscopy and photoluminescence [9,[12][13][14]. Si-CN binding revealed by FTIR was reported.…”

Section: Methodsmentioning

confidence: 99%

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On KCN treatment effects on optical properties of Si-based bilayers

Müllerová

Pinčík

Králik

et al. 2019

Journal of Electrical Engineering

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In this paper we report results from optical transmittance spectroscopy complemented with data from Raman scattering measurements to determine optical properties of two series of silicon based bilayers deposited by PECVD on glass substrate (intrinsic a-Si:H/p-type a-SiC:H and n-type mc-Si:H/intrinsic a-Si:H). These samples represent segments of common p-i-n thin film amorphous silicon solar cells with intrinsic hydrogenated silicon (a-Si:H) as the solar absorber. The members of the series differ by the KCN treatment conditions. Dispersive and absorptive optical properties – refractive indices, absorption coefficients and optical band gaps were determined from transmittance spectra. Each bilayer was considered as one effective thin film the optical properties of which can be regarded as effective optical properties of the bilayer structure. After KCN treatments refractive indices were modified probably due to the structural changes of bilayers. Moreover the effect of the solvent used in KCN solutions was recognized. Optical band gaps calculated either by the Tauc procedure or determined as iso-absorption levels were found to be only slightly KCN treatment dependent.

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Passivation of Si-based structures in HCN and KCN solutions

Cited by 9 publications

References 24 publications

High quality tunneling oxides for passivated contacts and heterojunctions for high efficiency silicon solar cells

High quality tunneling oxides for passivated contacts and heterojunctions for high efficiency silicon solar cells

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

On KCN treatment effects on optical properties of Si-based bilayers

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