On the thermal stability of physically-vapor-deposited diffusion barriers in 3D Through-Silicon Vias during IC processing

Civale, Yann; Croes, Kristof; Miyamori, Yuichi; Velenis, Dimitrios; Redolfi, A.; Thangaraju, Sarasvathi; Ammel, A. Van; Cherman, Vladimir; Plas, G. Van der; Cockburn, Andrew; Gravey, V.; Kumar, Nirajan; Cao, Zhitao; Travaly, Youssef; Tkei, Zsolt; Beyne, Eric; Swinnen, Bart

doi:10.1016/j.mee.2013.01.019

Cited by 7 publications

(3 citation statements)

References 10 publications

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“…Important adhesion and barrier layers are reported in the literature, i.e., Ti-TiN, Ti-TiW, and Ta-TaN in chip-scale technologies. Smaller and HAR TSVs require conformal metal coatings deposited by various atomic layer deposition and metal-organic CVD [108]. Previous reports have shown ALD-coated conformal Ru seed and TaN barrier layers in TSVs with fine diameters < 5 µm and aspect ratios > 25:1 [109].…”

Section: Functional Layersmentioning

confidence: 99%

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Jang,

Sharma,

Jung

2023

Materials

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Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.

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Section: Functional Layersmentioning

confidence: 99%

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Jang,

Sharma,

Jung

2023

Materials

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“…At present, SiN x by the plasma enhanced CVD (PECVD) method is used as the insulating barrier [2], and Ta, Ti, and other metal films [7] or TiN x film [8] are utilized as the diffusion barrier. However, because inferior film quality and barrier property are found as a result of reducing the temperature, and thus formation of films possessing distinguished barrier property and film quality even at low temperatures is desirable.…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Deposition of Reactively Sputtered SiN_x Films Applicable to TSV Process

Sato

Takeyama

Kobayashi

et al. 2016

Elect Comm in Japan

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In the through silicon via (TSV) process, which is a key technology for a three-dimensional large-scale integration (LSI), particularly in the "via-last process," SiN x films of high density are urgently needed for fabrication at low deposition temperatures. However, it is generally known that a SiN x film prepared at low temperatures shows low film density, resulting in poor insulating barrier properties. As a solution to this issue, we propose the use of the SiN x films deposited by reactive sputtering. We can obtain sputtered SiN x films at high density (2.78 to 2.99 g/cm 3 ) in spite of deposition without substrate heating. The 20-nmthick SiN x films passed an experimental check on barrier properties with respect to Cu diffusion upon annealing at 700°C for 1 h. The films also show good step coverage for a TSV with an aspect ratio of 1.5. The SiN x films prepared by reactive sputtering are a candidate for a good insulating barrier applicable to the via-last TSV process. C⃝ 2016 Wiley Periodicals, Inc. Electron Comm Jpn, 99(9): 101-107, 2016; Published online in Wiley Online Library (wileyonlinelibrary.com).

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“…In Si-LSI metallization and/or three-dimensional LSI such as through-silicon-via (TSV) technology, a diffusion barrier preventing Cu diffusion is essential for reliable Cu interconnects and/or wiring. [1][2][3][4][5][6][7][8][9] As a requisite for a diffusion barrier, we have proposed the following conditions: (1) a material with low resistivity to reduce signal delay originating from RC time constant, (2) a chemically stable material with a negatively large heat of formation, (3) a material in nanocrystalline texture suitable as a thin barrier to ensure as large Cu grains as possible. 10) We have examined the barrier properties of materials which satisfy the abovementioned conditions, and we have successfully demonstrated that these materials act as good barriers with highly thermal and structural stability.…”

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confidence: 99%

Cu(111) preferential orientation on thin HfN film as a diffusion barrier

Sato

Takeyama

2019

Jpn. J. Appl. Phys.

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We examined the effect of barrier thickness on Cu grain orientation control. We demonstrate that 5 nm thick HfN films which showed excellent barrier properties in our previous study are applicable to the underlayer for Cu grain orientation control. The strong (111)-oriented Cu layer is enhanced by using the HfN barrier with a 5 nm thickness. The obtained results bring about the compatibility of the high performance barrier with a suitable underlayer to obtain the highly-oriented Cu layer. These results are also valid for the development of barrier or underlayer materials for use in Si-LSI and three-dimensional LSI technology.

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On the thermal stability of physically-vapor-deposited diffusion barriers in 3D Through-Silicon Vias during IC processing

Cited by 7 publications

References 10 publications

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Low‐Temperature Deposition of Reactively Sputtered SiN_x Films Applicable to TSV Process

Cu(111) preferential orientation on thin HfN film as a diffusion barrier

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On the thermal stability of physically-vapor-deposited diffusion barriers in 3D Through-Silicon Vias during IC processing

Cited by 7 publications

References 10 publications

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Low‐Temperature Deposition of Reactively Sputtered SiNx Films Applicable to TSV Process

Cu(111) preferential orientation on thin HfN film as a diffusion barrier

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Product

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Low‐Temperature Deposition of Reactively Sputtered SiN_x Films Applicable to TSV Process