1998
DOI: 10.1006/jssc.1998.7820
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On the Spinel Precipitation in Al-Doped Ni1−xO

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Cited by 11 publications
(3 citation statements)
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“…24,25 Such metallic nickel atoms were expected to enhance the formation of the conductive filament in the NiO x film, producing reproducible resistive switching behavior during voltage sweeping. 24,25 Such metallic nickel atoms were expected to enhance the formation of the conductive filament in the NiO x film, producing reproducible resistive switching behavior during voltage sweeping.…”
Section: Characterization Of Chemical Binding Statesmentioning
confidence: 99%
“…24,25 Such metallic nickel atoms were expected to enhance the formation of the conductive filament in the NiO x film, producing reproducible resistive switching behavior during voltage sweeping. 24,25 Such metallic nickel atoms were expected to enhance the formation of the conductive filament in the NiO x film, producing reproducible resistive switching behavior during voltage sweeping.…”
Section: Characterization Of Chemical Binding Statesmentioning
confidence: 99%
“…Diversas investigaciones han mostrado que la formación de aluminato de níquel (capas con espesor entre 1 y 4Å ) en sistemas NiO/Al 2 O 3 preparados por impregnación de nitrato de níquel es un fenómeno que tiene lugar a temperaturas tan bajas como 350 °C [15][16][17]; esta situación significa que efectivamente el óxido de níquel reacciona con la alúmina a partir de 473 K para formar aluminato de níquel. Aunque aluminato de ní-quel es una espinela bien definida y difícil de reducir, la formación de seudoespinelas no necesariamente se limita a las mezclas estequiomé-tricas de óxido de níquel y de alúmina ya que los defectos tipo Al[Al 5/ 3 M 1/3 ]O 4 favorecen la formación de soluciones sólidas con especies M 2+ en las cuales los iones Ni 2+ se desplazan desde vacancias octaédricas hacia posiciones con alta energía de estabilización [18][19][20].…”
Section: Temperatura De Hidrólisis (unclassified
“…For example, in the NiO/NiAl 2 O 4 composite prepared by reactive sintering NiO and Al 2 O 3 powders with a negligible extent of nonstoichiometry, the NiAl 2 O 4 spinel was found to precipitate as micron-sized plates having {1 0 0} habit plane and parallel epitaxial relationship with the rock-salt type host, i.e. Al 3+ -doped NiO [1]. The NiAl 2 O 4 spinel also occurred as equi-axed particles, which tended to detach from grain boundaries in order to reach parallel epitaxial relationship with respect to the host via a Brownian-type rotation/coalescence process of the confined particles at high temperature [2].…”
Section: Introductionmentioning
confidence: 98%