Effect of Al doping on resistive switching behavior of NiOx films for nonvolatile memory application

Abstract

Articles you may be interested inResistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices J. Vac. Sci. Technol. A 32, 061505 (2014); 10.1116/1.4896329 Unipolar resistive switching behavior of amorphous YCrO3 films for nonvolatile memory applications J. Appl. Phys. 116, 084505 (2014); 10.1063/1.4893661 Effect of plasma treatment of resistive layer on a Cu/SiOx/Pt memory device J. Vac. Sci. Technol. A 32, 02B111 (2014); 10.1116/1.4859235Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device In this work, the authors investigated the effect of Al doping on the resistance switching characteristics of sputtered NiO x films. Pt/ NiO x / Pt metal-insulator-metal ͑MIM͒ stacks were fabricated by reactive dc magnetron sputtering with various Al contents in NiO x films and the resistance switching behavior of the MIM stack was characterized in conjunction with physical property, such as chemical bonding of NiO x . Al doping into NiO x films improved the endurance of SET/RESET operations, the distribution of V SET , and the memory window compared to the undoped NiO x films. X-ray photoemission spectroscopy showed that the Al doping caused the density of metallic nickel ͑Ni 0 ͒ to be increased with the reduction of Ni 3+ concentration. It was considered that the increase of metallic nickel ͑Ni 0 ͒ in Al-doped NiO x films enhanced the repeated formation and rupture of conductive filaments during resistive switching operation, resulting in the enhanced endurance and the narrowed V SET distribution.

The Effects of Mn-doping and Electrode Material on the Resistive Switching Characteristics of ZnOxS1-xThin Films on Plastic

“…Plastic-based ReRAM devices made of ZnO x S 1-x exhibit retention properties comparable to those of ReRAM devices on Si or glass. On the other hand, doping in resistive switching materials and electrode materials are known to have significant effects on the memory characteristics of ReRAM devices [13][14][15][16][17]. The resistive characteristics of the materials are influenced by several factors, such as the combination of top/bottom electrode materials, and resistive material/ electrode materials.…”

Ru-Al codoping to mediate resistive switching of NiO:SnO2 nanocomposite films

“…Through controlling defects by doping impurities such as Ti, Al, Li, or Nb, resistive switching (RS) property can be improved. 1,4,5 Constructing oxide heterostructures or multilayer structures is another effective way to modulate RS performance via interfacial effects. 6,7 For example, the Pt/NiO/Mg x Zn 1Àx O/Pt and In/GaO x /NiO x /ITO devices have displayed good endurance with the ratio of high resistance state (HRS) to low resistance state (LRS) about 10 6 and 10 2 , respectively.…”