Effect of Cu doping on the resistive switching of NiO thin films

Abstract

Bipolar resistive switching is observed in the GaIn/Cu:NiO film/ITO device with active layer deposited by sol-gel spin-coating. The first-principles calculations indicate that Cu dopants with valence of +1 are located at the substitutional Ni sites rather than the interstitial ones. Cu doping introduces more oxygen vacancies in the film and increases the carrier mobility, however, excessive Cu dopants may assemble at the grain boundary resulting in larger set voltage. Current–voltage measurements indicate that the trap charge limited and space charge limited conduction dominate the high resistance state, while the low resistance state follows the Ohmic mechanism. The switching is attributed to the formation/rupture of oxygen vacancy filaments.

A Computational Study on the Variation of Bandgap Due to Native Defects in Non-Stoichiometric NiO and Pd, Pt Doping in Stoichiometric NiO

“…The Pd 2+ atoms reorganize and stabilize the NiO units with increase in dopant concentration. The nonstoichiometric phase of NiO x goes through a phase of oxygen reduction (i.e., electrons), thus keeping the Fermi level that is close to the valence band [32]. Hence, it can be deduced that Pd-NiO is p-type in nature.…”

“…Recent studies indicate an enormous work in doped NiO to enhance room temperature ferromagnetism for multiferroic devices [30], supercapacitor applications [31], and resistive switching [32]. Dopants, such Cu [32] and Li [33] enhance the p-type conductivity of NiO films and have been studied extensively, both theoretically and experimentally.…”

“…Recent studies indicate an enormous work in doped NiO to enhance room temperature ferromagnetism for multiferroic devices [30], supercapacitor applications [31], and resistive switching [32]. Dopants, such Cu [32] and Li [33] enhance the p-type conductivity of NiO films and have been studied extensively, both theoretically and experimentally. Doping NiO with metals in the nickel family, i.e., Palladium (Pd) and Platinum (Pt), have gained attention, owing to their Electrochromic, supercapacitor, and gas-sensing applications and studied extensively experimentally [34][35][36][37][38][39][40], but no theoretical analysis has been investigated in knowing the vacancy and interstitial behavior in doped NiO.…”

Annealing-Driven Microstructural Evolution and Its Effects on the Surface and Nanomechanical Properties of Cu-Doped NiO Thin Films

“…Although stoichiometric NiO is an insulator with a high resistivity of~10 13 Ω-cm at room temperature, its resistivity can be significantly reduced via creating substantial concentrations of nickel vacancies and forming interstitial oxygen atoms in NiO crystallites [9]. Recently, it was demonstrated that by doping metallic elements, such as Li [10,11], Na [12], K [13,14] and Cu [15][16][17], the optical and electrical properties of the obtained NiO thin films could be enhanced/improved substantially. Namely, enhanced transparency, significantly lower resistivity and sufficiently large carrier concentrations were successfully achieved.…”

A Computational Study on the Variation of Bandgap Due to Native Defects in non-stoichiometric NiO and Pd, Pt Doping in Stoichiometric NiO

“…Also, recent studies indicate an enormous work in doped NiO to enhance room temperature ferromagnetism for multiferroic devices [27], supercapacitor applications [28] and resistive switching [29]. Dopants such Cu [29], Li [30] enhance the p-type conductivity of NiO films and have been studied extensively, both theoretically and experimentally. Doping NiO with metals in the nickel family, i.e.…”