Ru-Al codoping to mediate resistive switching of NiO:SnO2 nanocomposite films

Abstract

The Ru-Al codoped NiO:SnO2 nanocomposite films are revealed to exhibit bipolar resistive switching. The switching mechanism is well explained by the formation/rupture of filamentary paths due to the field-induced migration of oxygen vacancies and oxygen ions. Compared with that of the undoped NiO:SnO2 film, the ON/OFF ratio of Ru-Al codoped samples is largely improved. This is ascribed to the increased content of oxygen vacancies and trapped states between the equilibrium Fermi level and conduction band induced by the interstitial defects of Ru and Al.

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO2 resistive memory

“…As shown in the figure 3(a), reversible resistive switching can be observed over 30 times under multiple bias sweeping cycles, exhibiting that the Al/TiO 2 /Al resistor is successively integrated with the Al/PFBT/PMMA/ ZnO/GaIn heterojunction diode. The V set increased nearly 24.4% during sweeping cycles because of the Joule heating under sweeping cycles oxidize oxygen-deficient defects in the TiO 2 film and weaken the conduction filaments (see inset of figure 3(a)) [21]. Figure 3(b) shows the ON/OFF ratio of unbent device with about 12.1% degradation over ∼10 7 s at room temperature.…”

Bending effect on the resistive switching behavior of a NiO/TiO2 p–n heterojunction

“…On the basis of the filament model, 24–26 the resistance of LRS is determined by the number and/or the size of conducting filaments. 27 Since the size of the filaments in our sample is confined to the top electrode of the GaIn liquid droplet, 28 the confinement effects on the filaments may result in relatively low values of the current for RS. Yan et al showed that switching between different resistance states is usually abrupt, and the fluctuations of HRS are due to the random formation of filaments.…”

Interfacial Effects on Resistive Switching of Polymer Films Embedded with Different Nanomaterials

“…Then, the mixed solution was immediately spin-coated onto clean ITO substrate at 800 rpm for 5 s and 2000 rpm for 30 s. Next, the samples were dried on a hot plate at 80 °C for 10 min. Finally, the current–voltage ( I – V ) characteristics were measured using the eutectic alloy of gallium and indium (GaIn) droplet method . All processes were carried out under ambient conditions.…”