Interfacial Effects on Resistive Switching of Polymer Films Embedded with Different Nanomaterials

Abstract

The resistive switching of polymer films embedded with nanoparticles (NPs) has recently attracted great attention for the promising application in next-generation memory devices. In particular, the polymer/NP interface is believed to play a key role in affecting the electronic structure and charge transport of the nanocomposites films. Herein, interfacial effects on switching performance were studied by embedding different NPs so as to engineer the polymer/NP interface. An ON/OFF current ratio of >104 was observed in our device with the switching mechanism of charge trapping and detrapping. Using quantum-chemical calculations, we demonstrate that the interaction between polymer and NP can largely affect the electronic structure at the interface, resulting in different interfacial barrier. The transmission spectrum shows that the charge transport between polymer and NP may depend on the relative energetic position of the frontier molecular orbitals with respect to the Fermi level under the effects of bias. Our study may provide useful information for understanding the underlying physics of polymer memory devices.

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO2 resistive memory

“…In order to understand effect of fatigue fracture on the conduction mechanism, the schematic resistive switching mechanism and band diagrams of 1D1R were discussed under unbent and bent conditions. The highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) levels of PFBT are calculated by the density and functional theory in previous studies [33]. The LUMO, as path of charge transfer, plays a key role in affecting the carrier transport [34].…”

“…The LUMO, as path of charge transfer, plays a key role in affecting the carrier transport [34]. For PFBT, the carrier transport can be attributed to the charge trapping/detrapping process owing to the defects in the polymer [33]. For metal oxide, it is known that the switching mechanism is related to conduction filaments [11,14].…”

From Memristive Materials to Neural Networks

“…141 Jianchang Li et al embedded different nanoparticles to adjust charge transportation in a composite film. 142 Figure 6c shows the energy band gap alignment and charge transport process with different nanoparticles. According to the quantum-chemical calculation, the interaction within of heterojunction will significantly affect the electronic structure of the interface.…”

“…The modulated Schottky barrier at the interface of active layers and the electrodes can provide different resistance states . Jianchang Li et al embedded different nanoparticles to adjust charge transportation in a composite film Figure c shows the energy band gap alignment and charge transport process with different nanoparticles.…”

“…Figure c shows the energy band gap alignment and charge transport process with different nanoparticles. According to the quantum-chemical calculation, the interaction within of heterojunction will significantly affect the electronic structure of the interface . The resistive switching behaviors are controlled by trapped-charge-limited conduction (TCLC) and space charge-limited conduction (SCLC) when using different nanoparticles due to the induced deep or shallow traps.…”