On the Si–SiO2 interface trap time constant distribution in metal-oxide-semiconductor transistors

Abstract

Articles you may be interested inInterface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxidesemiconductor field effect transistor Appl. Phys. Lett. 98, 103513 (2011); 10.1063/1.3559223Role of shallow Si / SiO 2 interface states on high frequency channel noise in n -channel metal-oxidesemiconductor field effect transistors

On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices

“…They are extracted using (1) and (2). The trap profile has the same shape as that found in the literature using both calculation and measurement [22,37]. The Fig.…”

Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified

“…Hence, the first term in (19) represents the 3 dB reduction in trap noise power predicted by the stationary noise model. The second term in (19) is the surplus noise power reduction given by (21) (20), ii) PSD for the switching case based on the simplistic approach where a modulated version of the stationary model is used, with a frequency independent 3 dB reduction, iii) incorrect PSD for the switching case from Tian et al [12,Eq. (11)], with a larger than 3 dB but still frequency independent reduction, iv) correct PSD for the switching case as derived in (18).…”

Application and Evaluation of the RF Charge-Pumping Technique

“…2) The capture processes are negligible outside inversion and accumulation, i.e., at voltage levels between V T and V FB [1]. 3) At maximum CP conditions, the integral of c n (t) over time equals the integral of c p (t) over time [15]. Using assumptions 1) and 2), the increase in capture rate during inversion may be written as…”

“…Emission rates e n and e p are only dependent on the energy level of the trap with respect to the conduction band and valence band, respectively. No general closed-form solution can be found for the differential equation of (12); we will adopt a similar approach as in [15] in finding an expression for ∆f T from expression (12). In this approach, we make use of three basic assumptions.…”

“…We will approximate this function with a step function around ct = ln(3), after [15], giving a very simple expression for ∆f T at maximum CP conditions. We can now define parameter x T,max as the maximum value of x T where traps are located that are fast enough to contribute to the CP current.…”