On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Wong, Hei; Iwai, Hiroshi

doi:10.1016/j.mee.2006.01.271

Cited by 350 publications

(199 citation statements)

References 190 publications

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“…It is pointed out that theoretical simulations are able to match the rate of the current increase with voltage for ͉V͉ Ͼ 1 V. However, the absolute amplitude of the measured current for sample A prior to FGA at 400°C ͑Fig. 10͒ is approximately two orders of magnitude lower that the simulated JVs based on direct tunneling 1 . While thinner EOT HfO 2 films have been demonstrated using e-beam technique, 7 such a low leakage current is unusual.…”

Section: -6mentioning

confidence: 86%

“…10, which indicate that the leakage current density does increase following the FGA at 400°C to values around 2 ϫ 10 −3 A / cm 2 at V fb + 1 V into accumulation, in agreement with the theoretically predicted current density by direct tunneling. 1 1 The simulated JV is based on an ϳ6 Å SiO x and an ϳ37 Å HfO 2 composite layer with tunneling effective masses of 0.5m 0 and 0.11m 0 in the SiO x and HfO 2 , respectively, and electron affinities of 1.75 and 1.4 eV for the HfO 2 film and SiO x layer, respectively. The Ni gate work function is ϳ4.71 eV.…”

Section: -6mentioning

confidence: 99%

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Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Cherkaoui

Monaghan

Negara

et al. 2008

Journal of Applied Physics

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High dielectric constant hafnium oxide films were formed by electron beam ͑e-beam͒ evaporation on HF last terminated silicon ͑100͒ wafers. We report on the influence of low energy argon plasma ͑ϳ70 eV͒ and oxygen flow rate on the electrical, chemical, and structural properties of metal-insulator-silicon structures incorporating these e-beam deposited HfO 2 films. The use of the film-densifying low energy argon plasma during the deposition results in an increase in the equivalent oxide thickness ͑EOT͒ values. We employ high resolution transmission electron microscopy ͑HRTEM͒, x-ray photoelectron spectroscopy ͑XPS͒, and medium energy ion scattering experiments to investigate and understand the mechanisms leading to the EOT increase. We demonstrate very good agreement between the interfacial silicon oxide thicknesses derived independently from XPS and HRTEM measurements. We find that the e-beam evaporation technique enabled us to control the SiO x interfacial layer thickness down to ϳ6 Å. Very low leakage current density ͑Ͻ10 −4 A / cm 2 ͒ is measured at flatband voltage +1 V into accumulation for an estimated EOT of 10.9Ϯ 0.1 Å. Based on a combined HRTEM and capacitance-voltage ͑CV͒ analysis, employing a quantum-mechanical CV fitting procedure, we determine the dielectric constant ͑k͒ of HfO 2 films, and associated interfacial SiO x layers, formed under various processing conditions. The k values are found to be 21.2 for HfO 2 and 6.3 for the thinnest ͑ϳ6 Å͒ SiO x interfacial layer. The cross-wafer variations in the physical and electrical properties of the HfO 2 films are presented.

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Section: -6mentioning

confidence: 86%

Section: -6mentioning

confidence: 99%

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Cherkaoui

Monaghan

Negara

et al. 2008

Journal of Applied Physics

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“…1,2 To overcome this limit, alternative high-j materials have been proposed. Among them, zirconium and hafnium oxides, as well as their silicates are considered as the best candidates to replace SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates

Talbot

Roussel

Genevois

et al. 2012

Journal of Applied Physics

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Articles you may be interested inThe effect of nanocrystallite size in monoclinic HfO 2 films on lattice expansion and near-edge optical absorption Appl. Phys. Lett. 96, 191904 (2010) Hafnium silicate films were fabricated by RF reactive magnetron sputtering technique. Fine microstructural analyses of the films were performed by means of high-resolution transmission electron microscopy and atom probe tomography. A thermal treatment of as-grown homogeneous films leads to a phase separation process. The formation of SiO 2 and HfO 2 phases as well as pure Si one was revealed. This latter was found to be amorphous Si nanoclusters, distributed uniformly in the film volume. Their mean diameter and density were estimated to be about 2.8 nm and (2.9 6 0.4) Â 10 17 Si-ncs/cm 3 , respectively. The mechanism of the decomposition process was proposed. The obtained results pave the way for future microelectronic and photonic applications of Hf-based high-j dielectrics with embedded Si nanoclusters. V C 2012 American Institute of Physics. [http://dx

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“…This phenomenon is known as drain-induced barrier lowering (DIBL) [16]. In a MOSFET the tunneling of carriers from source to drain results in a leakage current [17]. So the use of HfO 2 above the SiO 2 layer is suitable to reduce this type of leakage as shown in fig.…”

Section: Introductionmentioning

confidence: 99%

Scaling Effect on Parameters of HfO2 Based CSDG MOSFET

Srivastava¹

2017

IJET

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-To make obvious the advantages of Nanoelectronic circuits with addition of functionality and chip density compared to the simple switch, application of cylindrical surrounding double-gate (CSDG) MOSFET is suitable. In addition to the Silicon-dioxide, in this present work, a high dielectric material (HfO 2 ) has been added. Various parameters such as scaling of device, thermal effect, ON-resistance and capacitances, equivalent oxide thickness, capacitance equivalent thickness, and breakdown of a CSDG MOSFET has been discussed. This provides an improved MOSFET to drive the nanotechnology circuit with minimum signal propagation delay.

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On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Cited by 350 publications

References 190 publications

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates

Scaling Effect on Parameters of HfO2 Based CSDG MOSFET

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