It is shown that co-implantation, with overlapping projected ranges of Si and P or As, followed by a single thermal annealing step is an efficient way to form doped Si nanocrystals (Si-nc's) embedded in SiO2 with diameters of a few nanometers. Atom probe tomography is used to image directly the spatial distribution of the various species at the atomic scale, evidencing that the P and As atoms are efficiently introduced inside the Si nanocrystals. In addition, we report on the influence of the dopant doses on the Si-nc's related photoluminescence as well as on the I(V) characteristics of MOS structures including these Si-nc's.
A B S T R A C Tα′ precipitation in a Fe-19 at.%Cr alloy aged at 500°C up to 2008 h has been characterized by both APT and SANS. This paper shows that when using an appropriate method for SANS data treatment, both APT and SANS yield consistent results regarding not only volume fraction and size but also α and α′ composition. Good agreement is achieved when α′ particles are considered as magnetic scattering features at the early stage of the kinetics.
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