On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines

Soni, Ankit; Shikha, Swati; Shrivastava, Mayank

doi:10.1109/ted.2019.2912783

Cited by 19 publications

(6 citation statements)

References 37 publications

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“…The donor-like and acceptor-like interface state energy levels of E C − 0.06 eV and E C − 1.5 eV with the trap density of 2.0 × 10 12 cm −2 and 1.0 × 10 13 cm −2 , respectively are taken into account for the simulation studies. 24,25) Other structural parameters, e.g. the p-NiO layer thickness (T NiO ) and the length of the anode electrode covering the p-NiO layer (L A ) have also been studied in detail for the proposed hybrid TMBS in this work.…”

Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage

Huang

Chu

Jia

et al. 2022

Jpn. J. Appl. Phys.

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In this work, a hybrid trench MOS barrier Schottky diode (TMBS) structure is proposed to improve both the forward current density and the breakdown voltage (BV) by using TCAD simulation tools. The hybrid structure means that the conventional TMBS rectifier is combined with a p-NiO/n-GaN diode. This can modulate the lateral energy bands by removing the conduction band barriers for electrons. Thus, the improved current spreading effect and the better conductivity modulation can be obtained, leading to the increased current density. Meanwhile, the embedded p-type NiO layer can also help to reduce the electric field at Schottky contact interface and the edge of anode contact/p-NiO layer interface. Thus, the breakdown voltage can be improved remarkably. Moreover, a detailed optimization strategy for the hybrid TMBS is also analyzed by varying the p-NiO layer thickness (TNiO) and the lengths of the anode electrode that is covered on the p-NiO layer (LA).

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Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage

Huang

Chu

Jia

et al. 2022

Jpn. J. Appl. Phys.

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show abstract

“…The energy levels of the acceptor traps are E C À 1.5 eV and the concentration of them is set as 5 Â 10 12 cm À2 . [5]…”

Section: Device Structurementioning

confidence: 99%

“…[4] However, due to the etching damage in recessed anode region, there will be a high reverse current (I REV ), resulting in large power losses during off-state. [5,6] Therefore, the post etching treatment, such as annealing, plasma treatment, and wet treatment, is vital to repair the etching damage. [7][8][9][10] Among these methods, F-plasma treatment is a simple and effective way to reduce I REV.…”

Section: Introductionmentioning

confidence: 99%

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Improving the Performance of Deep Recessed Anode AlGaN/GaN Schottky Barrier Diode by Post Etching Treatment

Wang

Zheng

et al. 2021

Physica Status Solidi (a)

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Herein, fluorine (F) plasma and HCl solution treatments are used as post etching treatment to improve the performance of recessed anode AlGaN/GaN Schottky barrier diodes (SBDs). To avoid the deterioration in the forward characteristics caused by F‐plasma treatment, the deep recessed anode structure is designed. Simulation results show that when the recessed depth exceeds 60 nm, the forward current is not reduced after the F‐plasma treatment. The recessed depth of 70 nm is chosen in the experiment. After the post etching treatment, the on‐resistance (RON) and forward voltage (VF) are reduced by 0.4 Ω mm and 0.4 V, respectively. The improvement of forward characteristic is attributed to the change of electron transport paths, which is due to the increase in barrier height and width at anode sidewall caused by F ions. Moreover, the reverse current (IREV) is suppressed by two orders of magnitude. It can be explained by the dispersion of electric field peaks by F‐plasma treatment and repair of etching damage after HCl treatment.

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“…These time difference (TD) method- or Monte Carlo (MC) method-based simulations are also time-consuming and poor in convergence. Moreover, due to the complicated coupling effects resulting from the stacked structure and 2D distribution of charges, considering the influence of background carriers, traps, and interface states in AlGaN/GaN HEMT, such a defect of the conventional TCAD method is therefore amplified [ 4 , 5 ]. For the same reason, the physical analytical models which are expected to be capable of effectively characterizing the correlation between structure parameters and off-state performance are yet to be presented, demonstrating the difficulty of characterizing the off-state performance.…”

Section: Introductionmentioning

confidence: 99%

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

et al. 2022

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Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN HEMTs with efficiency and veracity, an artificial neural network-based methodology is proposed in this paper. Given the structure parameters, the off-state current–voltage (I–V) curve can therefore be obtained along with the essential performance index, such as breakdown voltage (BV) and saturation leakage current, without any physics domain requirement. The trained neural network is verified by the good agreement between predictions and simulated data. The proposed tool can achieve a low average error of the off-state I–V curve prediction (Ave. Error < 5%) and consumes less than 0.001‰ of average computing time than in TCAD simulation. Meanwhile, the convergence issue of TCAD simulation is avoided using the proposed method.

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On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines

Cited by 19 publications

References 37 publications

Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage

Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage

Improving the Performance of Deep Recessed Anode AlGaN/GaN Schottky Barrier Diode by Post Etching Treatment

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

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