On the relation between deposition conditions and (mechanical) stress in plasma silicon nitride layers

Claassen, W. A. P.; Valkenburg, W.G.J.M.; Wijgert, W. M. van de; Willemsen, M.F.C.

doi:10.1016/0040-6090(85)90051-3

Cited by 59 publications

(44 citation statements)

References 10 publications

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“…This could be expected as the mean electron energy or electron temperature is much higher than the substrate temperature [20]. Our results confirm that in the experimental regime under investigation the electron-impact ionization and dissociation (Eqs.…”

Section: Process Optimization By Correlation Analysissupporting

confidence: 79%

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Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

et al. 2007

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Silicon oxynitride (SiO x N y :H) layers were grown from 2%SiH 4 /N 2 and N 2 O gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the relevant deposition parameters including radio frequency power, chamber pressure, total gas flow, substrate temperature and N 2 O/SiH 4 gas flow ratio. As a result, optimized SiO x N y :H layers could be produced over a wide index range (1.46-1.70) with good thickness uniformity and sufficiently high deposition rate. With a refraction index non-uniformity b5 × 10 − 4 a thickness non-uniformity could be obtained below 1% over a 70 × 70 mm 2 area of a 100 mm wafer at a deposition rate N 50 nm/min. The material composition and the optical properties of the SiO x N y :H layers were characterized by spectroscopic ellipsometry, X-ray Photoelectron Spectroscopy, Fourier Transform Infrared spectroscopy and prism coupler techniques. A simple atomic valence model is found to describe the measured atomic concentrations for PECVD silicon oxynitride layers.

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Section: Process Optimization By Correlation Analysissupporting

confidence: 79%

“…The chemical reactions at the surface can be enhanced by ion bombardment. The coexistence of Si-H, N-H and Si-OH bonds offer the possibility for eliminating H 2 and H 2 O [19,20]. In this way additional Si-N, Si-Si and Si-O-Si can be formed on the surface through the following reactions [20,21]:…”

Section: Deposition Mechanismmentioning

confidence: 99%

Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

et al. 2007

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“…The internal stress in diamond thin films, as in many other thin film materials, [1][2][3][4][5][6] accumulated either during or after deposition, has a significant effect on their physical properties. The films with tensile stress will tend to split and spall, and compressive films can be peeled off from the substrate and delaminate.…”

Section: Introductionmentioning

confidence: 99%

Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition

Wang

Polo

Sánchez

et al. 1996

Journal of Applied Physics

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The internal stress and strain in boron-doped diamond films grown by microwave plasma chemical vapor deposition ͑MWCVD͒ and hot filament CVD ͑HFCVD͒ were studied as a function of boron concentration. The total stress ͑thermalϩintrinsic͒ was tensile, and the stress and strain increased with boron concentration. The stress and the strain measured in HFCVD samples were greater than those of MWCVD samples at the same boron concentration. The intrinsic tensile stress, 0.84 GPa, calculated by the grain boundary relaxation model, was in good agreement with the experimental value when the boron concentration in the films was below 0.3 at. %. At boron concentrations above 0.3 at. %, the tensile stress was mainly caused by high defect density, and induced by a node-blocked sliding effect at the grain boundary.

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“…Our estimate of 3000 kg/m 3 is consistent with other reported values. 28 We now briefly discuss the form of the damping coefficient. Since the experimental chamber is evacuated to ≈ 2×10 −6 torr, the dissipation cannot have a substantial contribution from any viscous term z t that depends on the absolute motion of the string.…”

mentioning

confidence: 99%

Dissipation mechanisms in thermomechanically driven silicon nitride nanostrings

Suhel

Hauer

Biswas

et al. 2012

Applied Physics Letters

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High-stress silicon nitride nanostrings are a promising system for sensing applications because of their ultrahigh mechanical quality factors (Qs). By performing thermomechanical calibration across multiple vibrational modes, we are able to assess the roles of the various dissipation mechanisms in these devices. Specifically, we possess a set of nanostrings in which all measured modes fall upon a single curve of peak displacement versus frequency. This allows us to rule out bulk bending and intrinsic loss mechanisms as dominant sources of dissipation and to conclude that the most significant contribution to dissipation in high-stress nanostrings occurs at the anchor points.The extremely high values of mechanical Q that have been reported in silicon nitride nanostrings 1-3 have generated a great deal of excitement in the nanomechanics community. 4 These devices are ideal for use in mass sensing, 5 temperature sensing, 6 and optomechanics 7-9 and have proved to be an invaluable platform for research into the quantum properties of nanoscale resonators. 10,11 Nanostrings possess all the desired properties for these endeavors, including small mass, high frequency, and high Q, with correspondingly large displacement amplitudes. This combination makes them sensitive to external perturbation yet still within the limits of current detection techniques. 12 In this manuscript, we demonstrate thermomechanically limited detection of up to six mechanical nanostring modes. Furthermore, we present a set of devices in which all harmonics fall upon a single curve of calibrated peak displacement versus frequency. As we discuss below, we are able to infer that the mechanical Q is limited by dissipation processes operating in the vicinity of the anchor points-thus suggesting ways to further engineer the mechanical Q.Silicon nitride nanostrings are devices under extremely high tensile stress (σ = 0.8 GPa for our devices). The accepted understanding is that the tension along their length results in large stored elastic energy and a correspondingly large mechanical Q. 3 Experiments have confirmed that Q increases with mechanical tensioning of non-prestressed (low tension, non-stoichiometric silicon nitride) devices, 13,14 corroborating the tension's central role.In addition to causing the high Q, the tension compels the devices to behave like strings rather than doubly clamped beams, as one would usually expect for this geometry. The harmonics are at integer multiples of the fundamental frequency, 15 ν n = nν 1 , where ν 1 is the fundamental mode frequency and n indicates the mode number; the mode frequency depends only on the length of the string (not on the width or thickness). These features are in contrast to the more complicated harmonics of doubly clamped beams, 16 which are realized in low-stress silicon nitride devices of the same geometry. 17 Furthermore, it has now been shown that very high mechanical Qs exist for nanostrings under tension in a variety of other materials, including the polymer SU-8, 18 aluminum, 6,19 and AuPd...

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On the relation between deposition conditions and (mechanical) stress in plasma silicon nitride layers

Cited by 59 publications

References 10 publications

Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition

Dissipation mechanisms in thermomechanically driven silicon nitride nanostrings

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