Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition

Wang, W. L.; Polo, M.C.; Sánchez, G.; Cifré, J.; Esteve, J.

doi:10.1063/1.362996

Cited by 68 publications

(34 citation statements)

References 38 publications

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“…3). For B-doped films, the growth rate is lower than that for undoped samples, which is in agreement with previous reports [6,20,21]. This observation is related to the lower nucleation rate due to increase in doping level.…”

Section: Resultssupporting

confidence: 94%

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Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

Zhang

et al. 2010

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 94%

“…Furthermore, it was proposed that this redshift also reflects the tensile stress in B-doped films [6,20,23]. The Raman shift is then related to the total redshifts (Do 0 ¼Do Fano +Do stress ) of Fano interference (Do Fano ) and stress (Do stress ).…”

Section: Compared Residual Stress By Xrd and Raman Spectroscopymentioning

confidence: 98%

Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

Zhang

et al. 2010

Journal of Crystal Growth

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“…4) reflect both a Fano-type interaction and the presence of tensile stress. At the doping levels used in this work, lower than the critical threshold of $3 Â 10 20 cm À 3 [21] to clearly observe a strong Fano deformation of the Lorentzian Raman line, it is difficult to distinguish between the two mechanisms [22,23]. Although boron concentration of our samples is not high enough to clearly show the Fano effect, the comparison between the results of Raman analysis and electrical characterization shows the existence of a correlation between the full width at half maximum, G, of the diamond Raman peak and the activation energy, E a , deduced from conductivity measurements.…”

Section: Raman Characterization Of B-doped Diamond Filmsmentioning

confidence: 99%

Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors

Faggio

Messina

Santangelo

et al. 2012

Journal of Quantitative Spectroscopy and Radiative Transfer

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a b s t r a c tThanks to its exceptional physical and electronic properties, diamond is an attractive material for electronic devices working at high temperature and in harsh chemical environment. Its use as a semiconducting material for electronics is related to the possibility of doping it in order to control its conductivity. Semiconducting p-type diamond films can be grown when boron is introduced into the film. In this work, boron-doped (B-doped) homoepitaxial diamond films are grown by Microwave Plasma Enhanced Chemical Vapor Deposition. Raman and electrical characterizations are carried out on the films as a function of boron doping level. As the boron content increases, we observe systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak, as well as a wide and structured signal at lower wavenumbers, appears simultaneously in samples grown with higher boron content. A single crystal diamond Schottky diode based on a metal/intrinsic/p-type diamond junction is analysed.

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“…[20][21][22] In addition to the stress evaluation, the analysis of the Raman spectra gives lot information about the film properties, especially concerning the film purity.…”

Section: Raman Spectroscopymentioning

confidence: 99%

Analysis of residual stress in diamond films by x-ray diffraction and micro-Raman spectroscopy

Ferreira

Abramof

Leite

et al. 2002

Journal of Applied Physics

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We investigate the residual stress in diamond films grown on ͑001͒ silicon substrates as a function of film thickness. The diamond films were deposited at 1070 K by the conventional hot filament technique using a gas mixture of methane ͑1.0% vol͒ and hydrogen ͑99.0% vol͒. The film thickness, obtained from cross section scanning electron micrographs, varied from 3.0 to 42 m as the growth time increased from 1 to 10 h. These images evidenced that the columnar growth is already established for films thicker than 10 m. Top view micrographs revealed predominantly faceted pyramidal grains for the films at all growth stages. The grain size, obtained from these images, was found to vary linearly with film thickness. Using a high resolution x-ray diffractometer, the residual stress was determined by measuring, for each sample, the ͑331͒ diamond Bragg diffraction peak for ⌿ values ranging from Ϫ60°to ϩ60°, and applying the sin 2 method. For the micro-Raman spectroscopy, we used the summation method, which consists in recording and adding a large number of spectra in different places of a selected area of the sample. All Raman spectra were fitted with Lorentzian lines to separate the contribution of the pure diamond and the other nondiamond ͑graphite͒ phases. This spectral analysis performed in each sample allowed the determination of the residual stress, from the diamond Raman peak shifts, and also the diamond purity, which increases from 70% to 90% as the thickness goes from 3 to 42 m. The type and magnitude of the residual stress obtained from x-ray and micro-Raman measurements agreed well for films thicker than 10 m. For films thinner than this value, an opposite behavior between both results was observed. We attributed this discrepancy to the domain size characteristic of each technique.

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Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition

Cited by 68 publications

References 38 publications

Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors

Analysis of residual stress in diamond films by x-ray diffraction and micro-Raman spectroscopy

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