On the Properties of TiS3, ZrS3, and HfS3.

Haraldsen, Haakon; Kjekshus, A.; Roest, Els van der; Steffensen, Arne

doi:10.3891/acta.chem.scand.17-1283

Cited by 65 publications

(30 citation statements)

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“…Endo et al have shown that for both phases, the Fermi level lies above the top of valence band, meaning that the compounds are n-type semiconductors [21,22]. In TiS 3 , the band gap is found around 0.9 eV [18,23] with a large Seebeck coefficient of about S = −636 µV/K at 300 K [17]. Our data are in agreement with this (Figure 4b).…”

Section: Resultssupporting

confidence: 89%

“…-Nb is substituted for Ti, a change to a much more conducting behavior is evidenced with a dramatic drop of ρ at high temperature as x increases, and the suppression of the metal-like to insulator transition of TiS 3 . The activation energies calculated for the 325 K < T < 525 K region have values 60 meV < E A < 80 meV which are much smaller than those deduced from the TiS 3 ρ ( T ) curve in the low temperature regime [18,23]. This points towards a different mechanism for the transport properties with a much smaller direct band gap in the case of Nb-doped TiS 3 samples.…”

Section: Resultsmentioning

confidence: 97%

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Synthesis and Thermoelectric Properties in the 2D Ti1 – xNbxS3 Trichalcogenides

et al. 2015

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A solid solution of Ti1 − xNbxS3 composition (x = 0, 0.05, 0.07, 0.10) was synthesized by solid-liquid-vapor reaction followed by spark plasma sintering. The obtained compounds crystallize in the monoclinic ZrSe3 structure type. For the x = 0.07 sample, a mixture of both A and B variants of the MX3 structure is evidenced by transmission electron microscopy. This result contrasts with those of pristine TiS3, prepared within the same conditions, which crystallizes as a large majority of A variant. Thermoelectric properties were investigated in the temperature range 323 to 523 K. A decrease in the electrical resistivity and absolute value of the Seebeck coefficient is observed when increasing x due to electron doping. The lattice component of the thermal conductivity is effectively reduced by the Nb for Ti substitution through a mass fluctuation effect and/or a disorder effect created by the mixture of both A and B variants. Due to the low carrier concentration and the semiconductor character of the doped compounds, the too low power factor values leads to ZT values that remain smaller by a factor of 50 than those of the TiS2 layered compound.

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 97%

Synthesis and Thermoelectric Properties in the 2D Ti1 – xNbxS3 Trichalcogenides

et al. 2015

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“…Titanium disulfide, TiS 2 , is favoured above this temperature, usually as a result of trisulfide decomposition [31]. Investigations of powders and single crystals have established that TiS 3 is a weakly magnetic (and probably intrinsically diamagnetic) semiconductor (which can become extrinsically n-type [32][33][34]. The Raman spectrum of 9 ( Fig.…”

Section: Resultsmentioning

confidence: 99%

Growth and characterisation of titanium sulphide nanostructures by surface-assisted vapour transport methods; from trisulphide ribbons to disulphide nanosheets

Denholme¹,

Dobson²,

Weaver³

et al. 2012

IJNT

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Surface Assisted Chemical Vapour Transport (SACVT) methods have beenemployed to grow nanostructures of titanium disulfide (TiS 2 ) and titanium trisulfide (TiS 3 ). SACVT reactions occur bewteen titanium and sulfur powders to form TiS x species transported in the vapour phase to grow nanometric flower-like structures on titaniumcoated silica substrates. The evolution of structure and composition has been followed by powder X-ray diffraction, electron microscopy and Raman spectroscopy. At 1:2 Ti:S ratios, the size and shape of the hexagonal 1T-TiS 2 titanium disulfide structures formed can be varied from flower-like growths with "petals" formed from nanosheets 10 nm thick to platelets microns across. Increasing the proportions of sulfur (Ti:S 1:4) enables TiS 3 flower-like structures composed of radiating nanoribbons to grow at elevated temperatures without decomposition to TiS 2 . TEM/SAED suggests that individual trisulfide ribbons grow along the [010] direction. Magnetic properties of the disulfide nanomaterials have been determined using SQUID magnetometry and Raman spectra for disulfides suggest that their crystal and electronic structures may be more complex than expected for bulk, stoichiometric, CdI 2 -structured TiS 2 .Keywords: Titanium, sulfur, synthesis, growth, vapour transport, electron microscopy , structure, Raman spectroscopy, magnetism

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“…The synthesis of the TMTCs started to be investigated in the sixties of the past century due to the great variety of possible applications associated with their wide range of physical properties 87,93,102,103 . One of the most interesting materials of the family is TiS3 due to its low toxicity and the abundance and moderate cost of its constituent elements.…”

Section: Synthesis and Bulk Characterizationmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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On the Properties of TiS3, ZrS3, and HfS3.

Cited by 65 publications

References 0 publications

Synthesis and Thermoelectric Properties in the 2D Ti1 – xNbxS3 Trichalcogenides

Synthesis and Thermoelectric Properties in the 2D Ti1 – xNbxS3 Trichalcogenides

Growth and characterisation of titanium sulphide nanostructures by surface-assisted vapour transport methods; from trisulphide ribbons to disulphide nanosheets

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

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