On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K

Durmuş, Haziret; Yıldırım, Mert; Altındal, Ş.

doi:10.1007/s10854-019-01233-z

Cited by 23 publications

(11 citation statements)

References 42 publications

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“…A * value obtained from the temperature dependence of the I − V characteristics may be affected by the lateral inhomogeneity of the barrier, and the fact that it is different from the theoretical value may be connected to a value of the real effective mass that is different from the calculated one. Therefore, these undesirable findings clearly indicate the deviation from pure TE current mechanism and hence further investigations are required to understand the observed behavior [15,61,[71][72][73]77,96,153,[180][181][182].…”

Section: The Dependence Of Current-voltage Characteristics On Measurementioning

confidence: 99%

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Türüt¹

2020

Turk J Phys

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It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as "patches" with low barrier placed in a higher uniform barrier area.

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Section: The Dependence Of Current-voltage Characteristics On Measurementioning

confidence: 99%

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Türüt¹

2020

Turk J Phys

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“…For example, surface fabrication may include natural or a layer or both thickness and homogeneity, BH homogeneity at the M/S interface, voltage, surface temperature, eg homogeneity; surface conditions of these devices (Nss), series and shunt-resistances (Rs, Rsh) [12][13][14][15][16][17][18]. When observed experimentally, the low A * value shows that the effective area is actually much smaller than the diode area [19][20][21][22][23]. Therefore, analysis of CCMs in the temperature amplitude and applied pre-voltage voltage can ensure us with a lot of information, on the other hand, only in narrow or narow-temperature range BH does not give knowledge about the nature of the CCMs and the effect of the interlayer.…”

Section: Introductionmentioning

confidence: 99%

On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage

Sevgili

2021

J Mater Sci: Mater Electron

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Au/(nanocarbon-PVP)/n-Si SDs were fabricated and their current-conduction mechanisms (CCMs) have been examined in elaborative by utilizing current-voltage (I-V) characteristics in temperature range of 60-340K at (±3V) ranges. The values of ideality factor (n) and zero-bias barrier height (ΦBo) determined from the linear-part of semilogarithmic forward bias IF-VF properties based on Thermionic-Emission (TE) theory revealed that decrease in ΦBo and increase in n with deccreasing temperature. Additionally, Richardson constant (A*) value was found several orders lower than its theoretical value. The values of ΦBo and n changed from 0.173 eV to 0.837 eV and 6.60 to 2.85 with increasing temperature from 60 K to 340 K. This positive temperature-coefficient (α) of ΦBo is inagreement with the bandgap of semiconductor or barrier height (BH) for the ideal diode. The calculated higher value of n at low temperatures was attributed to the inhomogeneities of BH rather than the interlayer, surface-states (Nss), and imageforce lowering. With lowing temperatures, CCMs may be governed by tunneling over the lower barriers, via Nss, and generation recombination (GR), as well as TE and hence a complete description of CCM and understanding of the formation BH, remain a compelling problem. Nss-(Ec-Ess) profile was also obtained from IF-VF data for each temperature.

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“…This is because U Bo is expected to decrease with increasing temperature, such as in the forbidden bandgap of the semiconductors due to its expansion under the temperature effect. 9,14 At low temperatures and high-doped semiconductors, quantum tunnelling mechanisms such as field emission (FE) or thermionic field emission (TFE), multi-step tunnelling via surface states/traps, or T o anomaly are effective. [14][15][16][17][18][19] In this case the slopes of ln(I) versus V plots are almost constant, and hence n.t becomes also constant.…”

Section: Introductionmentioning

confidence: 99%

“…9,14 At low temperatures and high-doped semiconductors, quantum tunnelling mechanisms such as field emission (FE) or thermionic field emission (TFE), multi-step tunnelling via surface states/traps, or T o anomaly are effective. [14][15][16][17][18][19] In this case the slopes of ln(I) versus V plots are almost constant, and hence n.t becomes also constant. But, the higher value of experimental ideality factor at low temperatures and very-low value of Richardson constant (A*) obtained cannot be explained by only tunnelling mechanisms.…”

Section: Introductionmentioning

confidence: 99%

“…The obtained value of A* is several orders lower than the theoretical value, and higher values of n is more important evidence to deviate from TE theory which is already often reported by many researchers recently. [8][9][10][11][12][13][14][15][16] Such fluctuation in A*, BH and n values can be attributed to the spatial inhomogeneous BH at the M/S interface, which consists of low and high barrier or patches, and hence an effective active area is much smaller than the diode rectifier contact area. 8,[17][18][19][20][21][22][23] Lately, this case is explained by Gaussian distribution (GD) which reveals that the barrier in the M/S interface is not the only one, and it is predicted that there are many big or small barriers around an average barrier.…”

Section: Introductionmentioning

confidence: 99%

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On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

Baydilli

Kaymaz

Tecimer

et al. 2020

Journal of Elec Materi

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Au/PVA/n-GaAs (MPS) type Schottky diodes (SDs) were fabricated and investigated in a temperature range of 80-360 K to explain their possible conduction mechanisms (CMs). Three distinct linear regions with different slopes were observed in ln(I)-V plots. The first region (R1), is within the range of 0.22-0.60 V, the second region (R2), is within the range of 0.64-0.90 V, and the third region (R3), is within the range of 1.1-1.5 V. It was shown that both ideality factor (n) and zero-bias barrier height (U Bo) are strong functions of temperature for all three regions. It was noticed that n values decreased and U Bo values increased with increasing temperature. In order to ascertain the possible CMs, U Bo À n, À U Bo À q/2kT, and (n À1 À 1) À q/2kT plots were also examined. In each of these plots, two linear regions were obtained within each of the three regions. The region from 80-180 K is called the low-temperature range (LTR), and the region from 200-360 K is called the high-temperature range (HTR). It has been revealed that the reason for the deviation from the classical thermionic emission (TE) theory cannot be explained only by the existence of the interface layer, interface states (N SS) or quantum mechanical tunneling mechanisms, which can be also explained by the double Gaussian distribution (DGD) due to barrier inhomogeneity. Finally, the experimental Richardson constants (A*) were calculated from the interception point of the modified Richardson curve in LTR and HTR for all three regions. It was calculated as 6.22 and 8.13 A/cm 2 K 2 for RI, 7.77 and 8.14 A/cm 2 K 2 at R2, and 7.07 and 8.13 A/cm 2 K 2 at R3 for low-and high-temperature ranges, respectively. It is clear that especially HTR results are quite close to the known theoretical A* value of 8.16 A/cm 2 K 2 for n-GaAs.

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On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K

Cited by 23 publications

References 42 publications

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage

On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

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