Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)
DOI: 10.1109/hkedm.1999.836404
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On the oxide thickness dependence of the time-dependent-dielectric-breakdown

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Cited by 15 publications
(7 citation statements)
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“…Now by putting the values of FIT 1 and FIT 2 from Equations (8) and (9) into Equation (7), MTTF of the NoCGuard router is given as MTTF NoCGuard_router = 10 9 2830 + 10 9 753.7 + 10 9 2830 + 753. 7 ≈ 1959185.95 hours…”
Section: • Xb Pipeline Stagementioning
confidence: 99%
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“…Now by putting the values of FIT 1 and FIT 2 from Equations (8) and (9) into Equation (7), MTTF of the NoCGuard router is given as MTTF NoCGuard_router = 10 9 2830 + 10 9 753.7 + 10 9 2830 + 753. 7 ≈ 1959185.95 hours…”
Section: • Xb Pipeline Stagementioning
confidence: 99%
“…The maximum number of faults the router tolerates is the sum of the maximum number of faults each pipeline stage tolerates. Based on the above analysis, the maximum number of faults NoCGuard router tolerates is calculated as sum [9,20,20,3] = 52 f aults…”
Section: Mdtf Estimation Of Nocguard Routermentioning
confidence: 99%
“…The first is the increasing complexity of the fabrication process, which results in a higher rate of post-manufacturing faults. The second is the decreasing feature size of transistors, which causes hot carrier injection (HCI) [ 14 ], time-dependent dielectric breakdown (TDDB) [ 15 ], and negative-bias temperature instability (NBTI) [ 16 ]. Post-manufacturing faults are controlled by improving the fabrication process, whereas the effects of defects such as HCI, TDDB, and NBTI are not reversible.…”
Section: Introductionmentioning
confidence: 99%
“…are called permanent faults. Reasons of permanent faults are time-dependent dielectric breakdown (TDDB) [7], negatively biased temperature instability [8], hot carrier injection [9], and electro-migration [10]. The fault that lasts only for a few clock cycles and temporarily affects the operation of the circuit is called transient fault.…”
Section: Introductionmentioning
confidence: 99%
“…To find out the FIT, we use the Failure in Time Estimation Model proposed in Paluri and Louri [37] Lifetime modeling framework proposed by Shin et al [38] is utilized in this work. The value of FIT for a single field effect transistor (FET) which is produced by time dependent dielectric breakdown (TDDB) can be calculated by Equation 5 [7] FIT per FET = dutycycle × 10 9…”
mentioning
confidence: 99%