On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Cherkashin, Nikolay; Hÿtch, Martin; Houdellier, Florent; Hüe, Florian; Paillard, Vincent; Claverie, A.; Gouyé, A.; Kermarrec, O.; Rouchon, D.; Burdin, M.; Holliger, P.

doi:10.1063/1.3116648

Cited by 19 publications

(17 citation statements)

References 16 publications

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“…4b) with dark areas at the apex and also along the facets due to projected roughness and local strain. Pyramidal defect structures in the epitaxial Si:C layers (grown by RP-CVD) have been already described by Cherkashin et al [25]. In their case the pyramids are close to the surface of the Si:C and are much smaller (5 nm diameter at the top) with a wider bump on top.…”

Section: Impact Of C Incorporation On the Materials Qualitymentioning

confidence: 84%

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

Dhayalan

Loo

Hikavyy

et al. 2015

Journal of Crystal Growth

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Section: Impact Of C Incorporation On the Materials Qualitymentioning

confidence: 84%

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

Dhayalan

Loo

Hikavyy

et al. 2015

Journal of Crystal Growth

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“…(26) that, above a certain critical thickness (which decreases exponentially as the substitutional C content increases), some of the C atoms incorporate into interstitial sites. This critical thickness is the order of 30 nm for a 1.13% substitutional C content, i.e.…”

Section: Figure 4 : Cross-sectional Sem (Left) and 3d Afm (Right) Imamentioning

confidence: 98%

(Invited) Cyclic Deposition/Etch Processes for the Formation of Si Raised Sources and Drains in Advanced MOSFETs

Hartmann

Morel

et al. 2010

ECS Trans.

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We have studied the mechanisms underlying the Cyclic / Deposition Etch (CDE) of Si with either SiH 4 or SiH 2 Cl 2 + HCl for the deposition steps and HCl for the etch steps. We have first shown that the high partial pressure HCl etch rate of poly-Si was several times higher than the one of mono-crystalline Si (factor of 3-4 above 700°Cfactor of up to 15 at 600°C). We have then demonstrated that at 650°C, 300 Torr, SiH 4 / HCl CDE processes were selective versus SiO 2 provided that high numbers of cycles were used. We have then assessed the feasibility of growing rather thick Si 1-y C y layers at 600°C, 300 Torr thanks to SiH 4 and SiCH 6 (for a future used as stressors in devices with recessed Sources and Drains (S/D)). High growth pressures promoted the incorporation of C in substitutional rather than in interstitials sites, resulting in flat, rather high crystalline quality 30 nm thick Si 1-y C y layers with [C] subst. up to 1.3%. We have then showed that 20 Torr, SiH 2 Cl 2 + HCl -based CDE processes enabled to selectively grow 85 -140 nm thick, high crystalline quality intrinsic or in-situ doped Si Raised S/Ds on each side of multi-bridge channel Field Effect Transistors (FET) with Si 3 N 4 internal spacers (T = 750°C for Si and Si:B, T = 800°C for Si:Ph). Finally, we have demonstrated the efficiency of 1 and 6 cycles CDE process (instead of a unique growth step) in suppressing mushrooming on top of un-capped poly-Si gates of Fully Depleted Silicon-On-Insulator FETs after the formation of Si RSD. {116}-{117} facets at the boundary between the gate stack and the S/D regions together with moat recess at the edges of active regions were however associated to our CDE processes.

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“…This can be obtained by incorporating carbon onto substitutional sites in Si. However, the solid solubility of carbon being small, the concentration of carbon which can be incorporated is practically limited to less than 1% [14]. To test this option, a series of dummy transistors with a channel width of 65 nm were prepared using Si 0.99 C 0.01 sources and drains stressors for the Si channel in a ASM Epsilon® 2000 reactor.…”

Section: D Strain In Devicesmentioning

confidence: 99%

(Invited) Strain Mapping of Layers and Devices Using Electron Holography

et al. 2010

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We present the HoloDark technique which has recently been invented and allows one to map strain in two dimensions in layers and devices with nanometer resolution, high precision and large field of view. The technique is based on electron holography and is applicable to all standard focused-ion beam FIB prepared crystalline samples. We show a panorama of typical results obtained in SiGe stacks, ion implanted silicon, strained silicon channel nMOS and pMOS type transistors and in the challenging case of strained silicon FinFETs, In such materials and structures, the HoloDark technique, although still perfectible, appears as the only technique able to provide reliable and extended data against which simulations can be calibrated.

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On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Cited by 19 publications

References 16 publications

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

(Invited) Cyclic Deposition/Etch Processes for the Formation of Si Raised Sources and Drains in Advanced MOSFETs

(Invited) Strain Mapping of Layers and Devices Using Electron Holography

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