We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.

Improvements in transmission electron microscopy have transformed nanobeam electron diffraction into a simple and powerful technique to measure strain. A Si0.69Ge0.31 layer, grown onto a Si substrate has been used to evaluate the precision and accuracy of the technique. Diffraction patterns have been acquired along a ⟨110⟩ zone axis using a FEI-Titan microscope and have been analyzed using dedicated software. A strain precision of 6×10−4 using a probe size of 2.7 nm with a convergence angle of 0.5 mrad has been reached. The bidimensional distortion tensor in the plane perpendicular to the electron beam has been obtained.

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