On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

Abstract

A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage is substantially reduced, which in turns results in lower dynamic Ron. The traps in the epi structure are characterized by different electrical techniques such as drain current transient, on-the-fly trapping and ramped back-gating experiments. © 2015 IEEE

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

“…A schematic cross-section is shown in Fig.1a. For more details, see (9). A SEM cross-section of the GaN-on-Si buffer stack is shown in Fig.…”

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

“…Based on the previous discussion, one can conclude that, in order to simultaneously achieve an improvement in the leakage current and dynamic performance of GaN HEMTs, the density of dislocations, acting as both charging centres and charging paths, has to be reduced, as also shown by [26]. Current collapse would be reduced accordingly but not completely suppressed, as will be shown here.…”

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

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