Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Waller, William M.; Gajda, Mark; Pandey, Saurabh; Donkers, J.J.T.M.; Calton, David; Croon, J.A.; Karboyan, Serge; Šonský, Jan; Uren, Michael J.; Kuball, Martin

doi:10.1109/ted.2017.2654800

Cited by 28 publications

(33 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Specifically, changing the stoichiometry of low pressure chemical vapor deposition (LPCVD) SiNx increases vertical conductivity of the GaN located below the 2DEG channel and results in completely different charge trapping below the 2DEG, both vertically and laterally. Modifying the LPCVD SiNx has already been shown to cause changes to surface trapping, leakage and fieldplate pinch off voltages and a detailed analysis of these properties can be found in [10]. In addition to these surface changes we demonstrate here its impact upon the epitaxial conductivity and consequently the buffer contribution to current collapse.…”

Section: Introductionmentioning

confidence: 55%

“…[13] Wafer A exhibits significant current collapse and wafer C and D have almost none. Wafer B corresponds to close to optimum with a low off-state drain leakage (shown in [10]) and low current-collapse. This measurement, on its own, does not distinguish between trapping above and below the channel.…”

Section: A Dynamic Ron Measurementmentioning

confidence: 95%

“…[11] II. DEVICES AND MEASUREMENTS GaN-on-Si wafers were grown with nominally identical epitaxy and have been described in detail in another publication [10]. These wafers had a strain relief layer, a carbon doped GaN layer, an unintentionally doped GaN channel, a 20nm AlGaN layer and a 3nm GaN cap making a total epitaxial thickness of ∼5µm.…”

Section: Introductionmentioning

confidence: 99%

“…These devices also had full fieldplate structures consisting of a gate wing and two subsequent fieldplates at thicknesses of 70nm, 370nm and 670nm respectively. Full details of this fieldplate structure and threshold voltages are outlined in [10]. These devices were used to measure current collapse.…”

Section: Introductionmentioning

confidence: 99%

“…For measuring the impact of substrate bias ramps TLM structures were used with a width of 100μm and a range of contact spacings. A number of specially fabricated HEMT devices with a Schottky sense contact placed at different positions in the channel were used to measure channel potential [10,12]. Forcing a small forward-bias current across this extra contact measures the potential at that position.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition

Waller

Gajda

Pandey

et al. 2017

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 55%

Section: A Dynamic Ron Measurementmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition

Waller

Gajda

Pandey

et al. 2017

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

Investigation of Isolation Approaches and the Stoichiometry of SiN_x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Hult

Thorsell

Chen

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

Enhanced Performance of GaN HEMTs in X‐band Applications Using Si_xN/Si₃N₄ Bilayer Passivation Technique

Li,

Wu,

Yang

et al. 2024

Physica Status Solidi (a)

View full text Add to dashboard Cite

In order to achieve high‐performance gallium nitride (GaN) high‐electron‐mobility‐transistors (HEMTs) capable of operating in the X‐band, a bilayer passivation technique is employed. The technique involves creating a stacked passivation layer consisting of a 20‐nm Si‐rich silicon nitride (SixN) passivation layer and a 100‐nm N‐rich silicon nitride (Si3N4) passivation layer. This effectively reduces radio frequency scattering in GaN HEMTs without compromising the breakdown voltage (BV). On the one hand, the SixN passivation layer effectively suppresses the surface states of devices, resulting in low current collapse. On the other hand, the Si3N4 passivation layer can effectively reduce gate leakage caused by the SixN passivation layer, allowing the device to reliably operate at higher voltages. Consequently, a GaN HEMTs with SixN/Si3N4 bilayer passivation achieve a low current collapse of 5% and a high BV of 157 V. The device features a current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) of 57.9 and 96.8 GHz, respectively. Additionally, it exhibits excellent radio frequency performance in the X‐band, with an output power density (Pout) of 13.7 W mm−1 and power added efficiency of 60.8% at a drain voltage (VD) bias of 50 V.

show abstract

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Cited by 28 publications

References 18 publications

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition

Investigation of Isolation Approaches and the Stoichiometry of SiN_x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Enhanced Performance of GaN HEMTs in X‐band Applications Using Si_xN/Si₃N₄ Bilayer Passivation Technique

Contact Info

Product

Resources

About

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Cited by 28 publications

References 18 publications

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Enhanced Performance of GaN HEMTs in X‐band Applications Using SixN/Si3N4 Bilayer Passivation Technique

Contact Info

Product

Resources

About

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition

Investigation of Isolation Approaches and the Stoichiometry of SiN_x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Enhanced Performance of GaN HEMTs in X‐band Applications Using Si_xN/Si₃N₄ Bilayer Passivation Technique