(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Moens, P.; Banerjee, Abhishek; Constant, A.; Coppens, P.; Caesar, Markus; Li, Zilan; Vandeweghe, Steven; Declercq, Frederick; Padmanabhan, Balaji; Jeon, Woochul; Guo, Jia; Salih, Ali; Tack, M.; Meneghini, Matteo; Dalcanale, Stefano; Tajilli, A; Meneghesso, Gaudenzio; Zanoni, Enrico; Uren, Michael J.; Chatterjee, Indranil; Karboyan, Serge; Kuball, Martin

doi:10.1149/07204.0065ecst

Cited by 25 publications

(11 citation statements)

References 18 publications

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“…8b), associated with vertical and lateral current flow within the GaN:C layer. Two time constants that are consistent with this predicted behavior have been observed experimentally [25,26]. And for (D) the lower vertical resistivity through the UID-GaN layer results in the GaN:C staying pinned to the local 2DEG potential.…”

Section: Drain Bias Dependence Of Dynamic Ronsupporting

confidence: 75%

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“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Uren

Karboyan

Chatterjee

et al. 2017

IEEE Trans. Electron Devices

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184

112

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Section: Drain Bias Dependence Of Dynamic Ronsupporting

confidence: 75%

“…Fig. 4a shows a substrate ramp experiment for a high quality layer structure measured at ramp rates of 1 and 28 V/s corresponding to displacement currents of ~2 and ~60nA/cm 2 [25,26]. Fig.…”

Section: A Vertical Transportmentioning

confidence: 99%

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Uren

Karboyan

Chatterjee

et al. 2017

IEEE Trans. Electron Devices

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184

112

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“…2(a) is more complex, however, above 100°C it is consistent with the simulation, with GaN transport dominated by bulk resistive conduction via holes thermally activated to the VB, thus explaining the observed 0.9-eV activation energy. We note that two time constants (and hence apparent capture cross sections) from the same trap has previously been observed in related measurements and simulations for a p-type floating buffer [30], although in that case both contributions had the same sign. Below 100°C, the GaN buffer is more resistive and the behavior would be consistent with the hopping transport between the 2DEG and acceptors dominating, perhaps explaining the widely observed 0.5-0.6-eV activation energy [12], [14], [31].…”

Section: Fig 4 Vertical Electrical Field Component For the Buffers Ofsupporting

confidence: 74%

“Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model

Singh

Uren

Martin

et al. 2018

IEEE Trans. Electron Devices

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We report on a floating buffer model to explain "kink," a hysteresis in the output characteristics of Fe-doped AlGaN/GaN HEMTs observed at low drain bias. Unintentionally doped background carbon can make the GaN buffer p-type allowing it to electrically float. We further note that reverse bias trap-assisted leakage across the junction between the 2DEG and the p-type buffer can provide a mechanism for hole injection and buffer discharging at just a few volts above the knee, explaining the "kink" bias dependence and hysteresis. We show that HEMTs with a different background carbon have dramatically different kink behaviors consistent with the model. Positive and negative magnitude drain current transient signals with 0.9-eV activation energy are seen, corresponding to changes in the occupation of carbon acceptors located in different regions of the GaN buffer. The observation of such signals from a single trap calls into question conventional interpretations of these transients based on the bulk 1-D deep-level transient spectroscopy (DLTS) models for GaN devices with floating regions.

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“…After the substrate stress, there are two discharging paths as depicted in figure 7(b). The first path is vertical current flow leading to recombination between the positive and negative charges within the carbon doped GaN layer [16,17]. The second path is the same as the mechanism disccussed for ON-state stress, as the remaining negative charges spread laterally and flow to the contacts.…”

Section: Charge Trappingmentioning

confidence: 98%

Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation

Yang

Uren

Gajda

et al. 2021

Semicond. Sci. Technol.

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In this paper, we investigate the charge trapping in power AlGaN/GaN high electron mobility transistors which occurs in ON-state operation (V DS = 40 V, V GS = 0 V, I DS = 0.18 A mm −1 ). By analysing the dynamic ON-resistance (R ON ) after OFF-state and ON-state stress in devices with different SiN x passivation stoichiometries, we find that this charge trapping can be largely suppressed by a high Si concentration passivation. Both potential probe and electroluminescence (EL) measurements further confirm that the stress can induce negative charge trapping in the gate-drain access region. It is shown that EL is generated as expected under the field plates at the gate edge, but is obscured by the field plates and is actually emitted from the device near the drain edge; hence care is required when using EL alone as a guide to the location of the high field region in the device. From temperature-dependent dynamic R ON transient measurements, we determine that the apparent activation energy of the measured 'trap' response is around 0.48 eV, and infer that they are located in the heavily carbon-doped GaN layer. Using the leaky dielectric model, we explain the response in terms of the hopping transport from the same substitutional carbon acceptor buffer dopants.

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(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Abstract: University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available:

Cited by 25 publications

References 18 publications

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

“Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model

Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation

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