2019
DOI: 10.1515/sbeef-2019-0002 View full text |Buy / Rent full text
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Abstract: Due to the ISM band being unlicensed for communication applications, a lot of applications have been developed in this band and a good example is WiFi IEEE802.11a, b, g, n of Bluetooth. This numeracy of applications motivated this paper. The paper is concerned with the design of a low distortion 20dBm 2.4GHz class-J power amplifier (PA) since PAs are indispensable in radio communications. The design is based on the AVAGO ATF-52189 transistor with a transition frequency of 6GHz. The design is done as a hybrid c… Show more

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“…The Class-J PA presented in Ref. 20 designed with GaAs technology shows its linearity by delivering the OP1dB of 20 dBm that is almost nearer to the Psat of 21dBm similarly, the Class-JPA of this work delivers an OP1dB of 26.2 dBm that is almost nearer to the Psat of 27dBm to exhibits its linearity. A 130 nm CMOS-based 2-stage stacked Class-J PA delivers an OP1dB of 18 dBm, and a Psat of 20.2dBm with a max power gain of 15 dB is presented in Ref.…”
Section: Simulation Resultsmentioning
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rupbmjkragerfmgwileyiopcupepmcmbcthiemesagefrontiersapsiucrarxivemeralduhksmucshluniversity-of-gavle
“…The Class-J PA presented in Ref. 20 designed with GaAs technology shows its linearity by delivering the OP1dB of 20 dBm that is almost nearer to the Psat of 21dBm similarly, the Class-JPA of this work delivers an OP1dB of 26.2 dBm that is almost nearer to the Psat of 27dBm to exhibits its linearity. A 130 nm CMOS-based 2-stage stacked Class-J PA delivers an OP1dB of 18 dBm, and a Psat of 20.2dBm with a max power gain of 15 dB is presented in Ref.…”
Section: Simulation Resultsmentioning
“…Finally, the improved performance parameters of the proposed Class-J PA with L-type input and π-type output matching networks are compared with similar Class-J PAs in the literature. [30][31][32][33][34] As these PAs were designed at different frequencies and technologies, it is difficult to compare their performances. However, it can be noted that the Class-J PA design is proposed with a compact transmission line-based output matching network (OMN) in 30 that uses the same transistor technology (GaN) of this work to obtain broadband and highly efficient amplification and achieves a maximum drain efficiency of 75%.…”
Section: Discussionmentioning
“…Although our proposed PA is designed at different frequencies, its bandwidth is the same as that of this PA, and its transmission line-based M. Ns use a large chip area compared to the M. Ns of our work. A microwave Class-J PA for Wi-Fi IEEE802.11a Bluetooth applications designed with a methodology similar to that of this work in the same ADS EDA tool is presented in, 31 which uses a GaAs transistor as an active device but achieves a power output of 21 dBm and D. E of 69%. A fully integrated Class-J PA designed at 5 GHz for WLAN 802.11ax applications was presented in 32 that uses GaN on SiC technology with the same V dd=28 V to provide a maximum PAE of 55% and output power of 38 dBm, and it was mentioned that the performance of this PA can be enhanced further by employing DPD.…”
Section: Discussionmentioning