A low power, highly efficient, linear, enhanced wideband Class-J mode power amplifier for 5G applications

Sridhar, Nagisetty; Senthilpari, C.; Roslee, Mardeni; Yong, Wong Hin; Nandhakumar, T

doi:10.1038/s41598-022-12235-z

Cited by 4 publications

(3 citation statements)

References 20 publications

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“…process for integration. This issue can be resolved by replacing passive lumped elements of the PA with the active elements such as active inductors, Mos capacitors and active resistors to make it feasible for integration as proposed in our previous work [31]. Therefore, in this work the actual idea is to replace the passive lumped inductors of M.Ns with "tunable Active inductors "as shown in Fig.…”

Section: Two-stage Pa Design Methodologymentioning

confidence: 99%

Design of Multistage Class-AB/J Power Amplifier for 5G Smart grid’s Advanced Metering Infrastructure Applications

Sridhar

Senthilpari

Roslee

et al. 2022

Preprint

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The wireless communication networks for Advanced Metering Infrastructure (AMI) / smart metering applications of a smart grid are in need of emerging 5G technology for providing a significant enhancement in bandwidth (BW) to support a large amount of data transmission between the Meter data management system (MDMS) of operation centre and smart meters efficiently. The entire wireless communication network’s BW and efficiency mainly depend on its Power Amplifier (PA). The design of PA that can provide high efficiency with linearity over a wide BW is essential to meet the 5G wireless communication network requirements of AMI / smart metering applications. This paper presents the design methodology of a two-stage PA that operates at a 3.5 GHz centre frequency by utilizing the CGH40010F model GaN transistor. This PA employs a Class-J mode for the power stage that will be driven by a Class-AB mode to achieve high efficiency with improved power gain over desired BW. The matching Networks(M.Ns) of the proposed two-stage PA are designed with the idea to replace its passive lumped inductors with active inductors, based on the desired optimum impedance values obtained from the load-pull techniques utilizing the ADS EDA tool. The proposed two-stage PA delivers a power output of 41dBm with 21 dB of power gain over a BW around 400 MHz, a maximum Power Added Efficiency (PAE ) of 53% and maximum drain efficiency (D.E) of 54% with a small signal gain of 27dB at 3.5GHz using 28V power supply into 50 Ω load.

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Section: Two-stage Pa Design Methodologymentioning

confidence: 99%

Design of Multistage Class-AB/J Power Amplifier for 5G Smart grid’s Advanced Metering Infrastructure Applications

Sridhar

Senthilpari

Roslee

et al. 2022

Preprint

Self Cite

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show abstract

“…In design and analysis of Class-E power amplifier, the effects of input voltage waveforms 12 , duty ratio 13 , and parasitic linear and nonlinear capacitances 14 have been discussed. Also, comprehensive research projects have been conducted to improve the characteristics of PAs in different classes for biomedical industry 15 One of the important issues in the manufacture of biomedical implants is availability of reliable wireless power supplies and this paper is focused on this matter specially with regards to operation in harsh environments.…”

Section: Investigation Of Temperature Variations On a Class-e Inverte...mentioning

confidence: 99%

“…where i T is the current of the transistor in ON-state, which is presented in (15). The voltage of the DC power supply according to the drain voltage can be obtained.…”

Section: Presented Analysis For the Class E Inverter Figure 6 Shows T...mentioning

confidence: 99%

Investigation of temperature variations on a Class-E inverter and proposing a compensation circuit to prevent harmful effects on biomedical implants

Khodadoost

Hayati

Abbasi

2023

Sci Rep

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In this paper, a Class-E inverter and a thermal compensation circuit for wireless power transmission in biomedical implants are designed, simulated, and fabricated. In the analysis of the Class-E inverter, the voltage-dependent non-linearities of Cds, Cgd, and RON as well as temperature-dependent non-linearity of RON of the transistor are considered simultaneously. Close agreement of theoretical, simulated and experimental results confirmed the validity of the proposed approach in taking into account these nonlinear effects. The paper investigated the effect of temperature variations on the characteristics of the inverter. Since both the output power and efficiency decrease with increasing temperature, a compensation circuit is proposed to keep them constant within a wide temperature range to enable its application as a reliable power source for medical implants in harsh environments. Simulations were performed and the results confirmed that the compensator enables significant improvements by maintaining the power and efficiency almost constant (8.46 ± 0.14 W and 90.4 ± 0.2%) within the temperature range of − 60 to 100 °C. Measurements performed at 25 °C and 80 °C with and without the compensation circuit were in good agreement with the theoretical and simulation results. The obtained measured output power and efficiency at 25 °C are equal to 7.42 W and 89.9%.

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Design of dual-band power amplifier using bandstop filter and dual-mode bias circuit for multistandard transceiver systems

Zarghami,

Hayati

2023

Sci Rep

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This paper presents a dual-band power amplifier (PA) using a meandered line bandstop filter (BSF). An important challenge addressed in this design is to achieve proper isolation between the operational bands of the amplifier. The proposed BSF provides isolation and efficiency, effectively separating the output power and power gain between the two operational bands. Additionally, a dual-mode bias circuit is designed to serve as an inductor choke and control the second harmonics for both operating frequencies simultaneously. Two dual-band PAs, utilizing LDMOS and GaN HEMT transistors, have been designed using the proposed output matching circuit, which incorporates the BSF, bias circuit, and compensation circuit. The results obtained from both PAs, employing different transistors, are identical. Based on the presented concepts, a dual-band PA with an LDMOS transistor has been fabricated and measured. The measurements reveal an efficiency of 79.23%, an output power of 39.85 dBm, and a power gain of 14.85 dB at a frequency of 0.7 GHz. Similarly, at a frequency of 1.9 GHz, the efficiency is 77.24%, the output power is 38.22 dBm, and the power gain is 13.22 dB.

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A low power, highly efficient, linear, enhanced wideband Class-J mode power amplifier for 5G applications

Cited by 4 publications

References 20 publications

Design of Multistage Class-AB/J Power Amplifier for 5G Smart grid’s Advanced Metering Infrastructure Applications

Design of Multistage Class-AB/J Power Amplifier for 5G Smart grid’s Advanced Metering Infrastructure Applications

Investigation of temperature variations on a Class-E inverter and proposing a compensation circuit to prevent harmful effects on biomedical implants

Design of dual-band power amplifier using bandstop filter and dual-mode bias circuit for multistandard transceiver systems

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